Semiconductor device and method for manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKUO-PIN CHANG, YU-WEI TING, KUO-CHING HUANG, HUNG-JU LI
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Abstract
A semiconductor device and a method for manufacturing the semiconductor device are provided. The method comprises: providing a substrate; depositing a first silicon layer on the substrate, the first silicon layer including a first type portion, a second type portion, and an intrinsic portion disposed therebetween; depositing a second silicon layer on the first silicon layer; depositing a phase change material on the second silicon layer; forming a photoresist on the phase change material; and etching the phase change material and the second silicon layer to form a silicon structure and a phase change material layer.
Claims20
A method for manufacturing a semiconductor device, comprising:
- providing a substrate;
- depositing a first silicon layer on the substrate, the first silicon layer including a first type portion, a second type portion, and an intrinsic portion disposed therebetween;
- depositing a second silicon layer on the first silicon layer;
- depositing a phase change material on the second silicon layer;
- forming a photoresist on the phase change material;
- and
- etching the phase change material and the second silicon layer to form a silicon structure and a phase change material layer.
A method, comprising:
- providing a substrate;
- forming a microring resonator modulator (MRM) on the substrate, the MRM including a first type doped portion, a second type doped portion, and an intrinsic portion disposed therebetween;
- forming a wavelength-adjusting component on the MRM;
- depositing a dielectric layer on the substrate to cover the MRM and the wavelength-adjusting component;
- and
- forming a heater on the dielectric layer,
- wherein the wavelength-adjusting component is configured to adjust a wavelength of an optical signal in the MRM based on energy received from the heater.
A semiconductor device, comprising:
- a substrate;
- a first dielectric layer disposed on the substrate;
- a semiconductor structure disposed on the first dielectric layer;
- a phase change material layer disposed on the semiconductor structure;
- a second dielectric layer disposed on the first dielectric layer and covering the semiconductor structure and the phase change material layer;
- and
- a heater disposed on the dielectric layer,
- wherein the phase change material layer is configured to receive heat from the heater to change from an amorphous state to a crystalline state.
Dependencies are inferred from the claim text.