Semiconductor device imaging method
AssigneeSamsung Electronics Co., Ltd.
InventorsTaejin KWON, Jeonghoi KIM, Jongcheon SUN, Su-Young LEE, Hyeongcheol LEE
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Abstract
A method of imaging a semiconductor device includes forming an X-ray source layer on a first surface of a semiconductor substrate, mounting the semiconductor substrate in a semiconductor device imaging apparatus, the semiconductor device imaging apparatus including an electron-beam feeder and an X-ray detector, irradiating electron-beams on the X-ray source layer of the semiconductor substrate using the electron-beam feeder, and measuring X-rays emitted from the X-ray source layer and having passed through the semiconductor substrate using the X-ray detector.
Claims20
A method of imaging a semiconductor device, the method comprising:
- forming an X-ray source layer on a first surface of a semiconductor substrate;
- mounting the semiconductor substrate in a semiconductor device imaging apparatus, the semiconductor device imaging apparatus including an electron-beam feeder and an X-ray detector;
- irradiating electron-beams on the X-ray source layer of the semiconductor substrate using the electron-beam feeder;
- and
- measuring X-rays emitted from the X-ray source layer and having passed through the semiconductor substrate using the X-ray detector.
A method of imaging a semiconductor device, the method comprising:
- mounting a semiconductor substrate in a semiconductor device imaging apparatus including an electron-beam feeder and an X-ray detector;
- irradiating electron-beams on an X-ray source layer of the semiconductor substrate using the electron-beam feeder;
- and
- measuring X-rays emitted from the X-ray source layer and having passed through the semiconductor substrate using the X-ray detector, wherein
- the semiconductor substrate includes the X-ray source layer on a first surface of the semiconductor substrate, and the semiconductor substrate is mounted in the semiconductor device imaging apparatus such that the X-ray source layer faces the electron-beam feeder.
A method of imaging a semiconductor device, the method comprising:
- forming a dummy layer and an X-ray source layer on a first surface of a semiconductor substrate, the dummy layer and the X-ray source layer covering an entirety of the first surface;
- mounting the semiconductor substrate between an electron-beam feeder and an X-ray detector of a semiconductor device imaging apparatus, the semiconductor substrate being mounted such that the X-ray source layer faces the electron-beam feeder, and the electron-beam feeder and the X-ray detector being spaced apart in a first direction from each other;
- rotating the semiconductor substrate about a rotational axis passing through a center of the first surface of the semiconductor substrate and extending in a direction of a line that is normal to the first surface of the semiconductor substrate;
- irradiating electron-beams toward the X-ray source layer of the semiconductor substrate using the electron-beam feeder;
- directly striking the X-ray source layer with the electron-beams to cause the X-ray source layer to form X-rays;
- and
- detecting the X-rays that pass through the semiconductor substrate using the X-ray detector, wherein,
- in the mounting of the semiconductor substrate, the semiconductor substrate is mounted in the semiconductor device imaging apparatus such that the direction of the line normal to the first surface of the semiconductor substrate and the first direction intersect each other.
Dependencies are inferred from the claim text.