Shape profile measurement device, shape profile measurement method, and semiconductor manufacturing method including the same

A shape profile measurement device comprising:

• a first light source configured to generate and emit a first light signal;
• a second light source configured to generate and emit a second light signal;
• a relay optical system configured to receive the first light signal from the first light source and the second light signal from the second light source, perform axial chromatic aberration on the first light signal, output a chromatically dispersed light over a plurality of wavelengths to a measurement target and the second light signal to the measurement target, and output a reflected first light signal reflected from the measurement target and a reflected second light signal reflected from the measurement target, wherein the reflected first light signal corresponds to the first light signal, wherein the reflected second light signal corresponds to the second light signal, and wherein the chromatically dispersed light is focused at different positions along an optical axis of the first light signal received from the first light source;
• a first detector configured to receive the reflected first light signal reflected from the measurement target and detect a wavelength of the reflected first light signal among the plurality of wavelengths;
• a second detector configured to detect the reflected second light signal reflected from the measurement target;
• and
• a processor configured to calculate a shape profile of the measurement target based on a focal position of the wavelength of the reflected first light signal and a planar image of the measurement target based an intensity of the reflected second light signal,
• wherein the measurement target comprises a front surface having a pattern formed thereon and a back surface that is opposite to the front surface, and the light signal is incident to the back surface of the measurement target.

A shape profile measurement method comprising:

• placing a measurement target on a stage, wherein the measurement target includes a front surface at which patterns are formed and a back surface opposite to the front surface;
• generating and emitting a first light signal having a wavelength band of a plurality of wavelengths;
• performing axial chromatic aberration on the first light signal to generate a chromatically dispersed light signal over the plurality of wavelengths;
• emitting the chromatically dispersed light signal to the measurement target, wherein the chromatically dispersed light signal travels from the back surface of the measurement target to the front surface of the measurement target;
• detecting a first wavelength of the chromatically dispersed light signal reflected from the back surface of the measurement target and a second wavelength of the chromatically dispersed light signal reflected from the front surface of the measurement target;
• and
• calculating a surface profile of the front surface of the measurement target based on a first focal position of the first wavelength and a second focal position of the second wavelength.