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US 2026/0103794 A1Published application
Area selective atomic layer thin film deposition method
AssigneeInha University Research and Business Foundation
InventorsIn Hwan BAEK, Da Hui JEON, In Hong HWANG, Min Ki CHOE, Yoo Hyeon JUNG, Jae Yoon SHIM, Jae Min JUNG
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Abstract
An embodiment relates to an area selective atomic layer thin film deposition method, including: performing surface treatment using fluorocarbon (CFx) plasma on a non-deposition area of the surface of a substrate; providing a thin film precursor and a reactant to the substrate to selectively form an atomic layer thin film on a deposition area of the substrate surface; and removing any residue remaining on the non-deposition area.
Claims11
An area selective atomic layer thin film deposition method, comprising:
- performing surface treatment using fluorocarbon (CFx) plasma on a non-deposition area of a surface of a substrate;
- providing a thin film precursor and a reactant to the substrate to selectively form an atomic layer thin film on a deposition area of the surface of the substrate;
- and
- removing any residue remaining on the non-deposition area.
1 more element
Dependencies are inferred from the claim text.