Slurry composition for chemical mechanical polishing and method of manufacturing semiconductor device using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsWansu SONG, Donghoon KWON
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Abstract
According to some aspects of the present disclosure, a slurry composition for chemical mechanical polishing may include polishing particles including a piezoelectric material, and an oxidizing agent, wherein the piezoelectric material may include a first piezoelectric material and a second piezoelectric material bonded to the first piezoelectric material, and the first piezoelectric material and the second piezoelectric material may have different bandgaps from each other.
Claims20
A slurry composition for chemical mechanical polishing, comprising:
- polishing particles comprising a piezoelectric material;
- and
- an oxidizing agent, wherein
- the polishing particles comprise a first particle comprising a first piezoelectric material and a second particle comprising a second piezoelectric material,
- the second piezoelectric material is bonded to the first piezoelectric material, and
- the first piezoelectric material and the second piezoelectric material have different respective bandgaps from each other.
A slurry composition for chemical mechanical polishing, comprising:
- polishing particles comprising a piezoelectric material;
- and
- an oxidizing agent, wherein
- the polishing particles comprise a first particle comprising a first piezoelectric material and a second particle comprising a second piezoelectric material,
- the second piezoelectric material is bonded to the first piezoelectric material, and
- the first piezoelectric material and the second piezoelectric material differ from each other in at least one property selected from the group consisting of respective particle size and respective material.
A method of manufacturing a semiconductor device, comprising:
- forming a metal film on a substrate;
- and
- performing a chemical mechanical polishing process on the metal film using a slurry composition for chemical mechanical polishing, wherein
- the slurry composition for chemical mechanical polishing comprises:
- polishing particles comprising a piezoelectric material;
- and
- an oxidizing agent, and
- the polishing particles comprise a first particle comprising a first piezoelectric material and a second particle comprising a second piezoelectric material,
- the second piezoelectric material is bonded to the first piezoelectric material, and
- a first bandgap of the first piezoelectric material and a second bandgap of the second piezoelectric material are different from each other.
Dependencies are inferred from the claim text.