# US 2026/0101799 A1 · Semiconductor structure and method of manufacturing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2026/0101799 A1 - Document ID: US20260101799A1 - Status: Published application - Kind: A1 - Application number: 18/906,717 - Filed: 2024-10-04 - Published: 2026-04-09 - Earliest claimed: 2024-10-04 - Assignees: Taiwan Semiconductor Manufacturing Company, Ltd. - Applicants: Taiwan Semiconductor Manufacturing Company Ltd. - Inventors: LI-WEN HO; CHUNG-CHUAN TSENG - Web page: https://patentgrep.com/patent/US20260101799A1 ## CPC - H10W 72/90: Bond pads, in general - H10W 72/019: {of bond pads} - H10W 72/01931: {using blanket deposition} - H10W 72/01951: {Changing the shapes of bond pads} - H10W 72/932: {Plan-view shape, i.e. in top view} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A semiconductor structure includes a first conductive element having a first side, a second conductive element having a second side contacting the first side of the first conductive element; and a blocking member, surrounded by the first conductive element and adjacent to the second conductive element. A first width of the first side is substantially greater than a second width of the second side, and at least a portion of the first conductive element is disposed between the second conductive element and the blocking member. A method of manufacturing a semiconductor structure, includes providing a dielectric; patterning the dielectric to form a first opening having a first portion and a second portion connected to the first portion, wherein a blocking member is disposed within the first portion; disposing a first conductive element and a second conductive element into the first portion and the second portion of the first opening respectively. ## Claims ### Claim 1 A semiconductor structure, comprising: a first conductive element, having a first side; a second conductive element, having a second side contacting the first side of the first conductive element; and a blocking member, surrounded by the first conductive element and adjacent to the second conductive element, wherein a first width of the first side is substantially greater than a second width of the second side, and at least a portion of the first conductive element is disposed between the second conductive element and the blocking member. ### Claim 2 (depends on 1) The semiconductor structure of claim 1, wherein the first conductive element has a third side opposite to the first side, and a first distance between the first side and the blocking member is substantially less than a second distance between the third side and the blocking member. ### Claim 3 (depends on 2) The semiconductor structure of claim 2, wherein the first distance is substantially greater than 50 nm. ### Claim 4 (depends on 1) The semiconductor structure of claim 1, wherein the blocking member includes a concave portion facing the second side of the second conductive element. ### Claim 5 (depends on 1) The semiconductor structure of claim 1, wherein the blocking member is continuous and integral. ### Claim 6 (depends on 1) The semiconductor structure of claim 1, wherein the blocking member includes segments separated from each other. ### Claim 7 (depends on 1) The semiconductor structure of claim 1, wherein the blocking member has a top surface substantially coplanar with a top surface of the first conductive element. ### Claim 8 (depends on 1) The semiconductor structure of claim 1, wherein the blocking member includes dielectric material. ### Claim 9 (depends on 1) The semiconductor structure of claim 1, wherein the first width is at least 20 times the second width. ### Claim 10 A semiconductor structure, comprising: a first blocking member; a first conductive element surrounding the first blocking member; a second conductive element contacting the first conductive element; and a dielectric layer surrounding the first conductive element and the second conductive element, wherein the first blocking member faces the second conductive element, and a first width of the first blocking member is substantially greater than a second width of the second conductive element. ### Claim 11 (depends on 10) The semiconductor structure of claim 10, wherein the first blocking member has a top surface substantially coplanar with a top surface of the first conductive element. ### Claim 12 (depends on 10) The semiconductor structure of claim 10, further comprising: a third conductive element coupled to the first conductive element; and a second blocking member surrounded by the third conductive element having a second convex portion; wherein the first conductive element is disposed between the second conductive element and the third conductive element, the second convex portion faces the second conductive element, and a third width of the second blocking member is greater than the second width of the second conductive element. ### Claim 13 (depends on 12) The semiconductor structure of claim 12, wherein the second convex portion faces the first blocking member. ### Claim 14 A method of manufacturing a semiconductor structure, comprising: providing a dielectric layer; patterning the dielectric layer to form a first opening having a first portion and a second portion connected to the first portion, wherein a blocking member is disposed within the first portion of the first opening; disposing a first conductive element into the first portion of the first opening, wherein the blocking member is surrounded by the first conductive element; and disposing a second conductive element into the second portion of the first opening, wherein the second conductive element is electrically connected to the first conductive element. ### Claim 15 (depends on 14) The method of claim 14, wherein the first opening and the blocking member are formed simultaneously. ### Claim 16 (depends on 14) The method of claim 14, further comprising: forming a second opening by removing a third portion of the dielectric layer, and disposing the blocking member into the second opening before patterning the dielectric layer to form the first opening. ### Claim 17 (depends on 16) The method of claim 16, wherein the dielectric layer includes a first material and the blocking member includes a second material different from the first material. ### Claim 18 (depends on 14) The method of claim 14, wherein the first conductive element and the second conductive element are formed simultaneously. ### Claim 19 (depends on 14) The method of claim 14, wherein the blocking member having a convex portion faces the second portion of the first opening. ### Claim 20 (depends on 14) The method of claim 14, further comprising: planarizing the blocking member, the first conductive element and the second conductive element.