Method for manufacturing semiconductor stack structure with ultra thin dies

A method for manufacturing a semiconductor stack structure with ultra thin dies, comprising:

• manufacturing a plurality of semiconductor wafers, wherein manufacturing steps for each of the semiconductor wafers comprise:
• providing a semiconductor substrate having an active surface and a back surface opposite each other;
• forming a stop layer structure in the semiconductor substrate to divide the semiconductor substrate into a first substrate part and a second substrate part, wherein the first substrate part is located between the stop layer structure and the active surface, the second substrate part is located between the stop layer structure and the back surface, the stop layer structure at least comprises a dielectric stop layer, and the dielectric stop layer is manufactured by performing an ion implantation process at a depth of the semiconductor substrate and performing a high-temperature treatment process, such that the dielectric stop layer is formed in a region for the ion implantation process;
• and
• sequentially forming an epitaxial layer, an active layer, a redistribution layer, and a first bonding layer on the active surface;
• providing a carrier board and forming a second bonding layer on the carrier board;
• selecting one of the semiconductor wafers as a first semiconductor wafer, and inverting the first semiconductor wafer to bond the first bonding layer of the first semiconductor wafer with the second bonding layer;
• removing the second substrate part of the first semiconductor wafer and the stop layer structure to expose the first substrate part of the first semiconductor wafer;
• forming a plurality of wafer conductive structures that penetrate the first substrate part, the epitaxial layer, and the active layer of the first semiconductor wafer to be connected to the redistribution layer, and thinning the first substrate part, such that the wafer conductive structures protrude out of the first substrate part;
• forming a first dielectric layer on the first substrate part of the first semiconductor wafer to cover the wafer conductive structures, and thinning the first dielectric layer to expose the wafer conductive structures;
• forming a first bonding dielectric layer on the first dielectric layer and the wafer conductive structures, wherein a plurality of first conductive blocks penetrate the first bonding dielectric layer, and the first conductive blocks are electrically connected to the wafer conductive structures, respectively;
• selecting another one of the semiconductor wafers as a second semiconductor wafer, disposing a plurality of conductive pillars on the first bonding layer of the second semiconductor wafer to be electrically connected to the redistribution layer, and performing die sawing on the second semiconductor wafer to form a first batch of semiconductor dies and a second batch of semiconductor dies that are to be stacked;
• inverting the first batch of semiconductor dies, such that the first bonding layer of the first batch of semiconductor dies and the first bonding dielectric layer are opposite each other and bonded together through a hybrid bonding technology, wherein the conductive pillars of the first batch of semiconductor dies respectively correspond to and are electrically connected to the first conductive blocks;
• performing a back surface grinding process on the second substrate part of the first batch of semiconductor dies to thin the second substrate part;
• forming on the first bonding dielectric layer a first packaging colloid that covers the first batch of semiconductor dies and fills up gaps between the first batch of semiconductor dies;
• removing part of the first packaging colloid and removing the second substrate part and the stop layer structure of the first batch of semiconductor dies to expose the first substrate part of the first batch of semiconductor dies;
• forming a plurality of first die conductive structures that penetrate the first substrate part, the epitaxial layer, and the active layer of the first batch of semiconductor dies to be connected to the redistribution layer, and thinning the first substrate part of the first batch of semiconductor dies, such that the first die conductive structures protrude out of the first substrate part;
• forming a second dielectric layer on the first packaging colloid and the first substrate part of the first batch of semiconductor dies, and thinning the second dielectric layer to expose the first die conductive structure;
• and
• forming a second bonding dielectric layer on the second dielectric layer and the first die conductive structures, wherein a plurality of second conductive blocks penetrate the second bonding dielectric layer, and the second conductive blocks are electrically connected to the first die conductive structures, respectively.