Semiconductor package and method of manufacturing semiconductor package

A semiconductor package, comprising:

• a first die;
• a second die disposed over the first die;
• an encapsulating material over the first die and laterally encapsulating the second die;
• a thermal conductive layer conformally covering the second die and the encapsulating material, wherein there is a step difference at an upper surface of the thermal conductive layer;
• a filling material disposed over the thermal conductive layer for compensating the step difference, wherein a thermal conductivity of the thermal conductive layer is higher than a thermal conductivity of the filling material;
• and
• a carrier bonded to the thermal conductive layer and the filling material.

A manufacturing method of a semiconductor package, comprising:

• providing a wafer;
• bonding a device die over the wafer;
• providing an encapsulating material over the wafer for encapsulating the device die;
• performing a first thinning process over the encapsulating material for revealing a back surface of the device die;
• conformally depositing a thermal conductive layer over the device die and the encapsulating material, wherein a profile of the thermal conductive layer comprises a valley portion;
• providing a filling material over the thermal conductive layer for filling the valley portion, wherein a thermal conductivity of the thermal conductive layer is higher than a thermal conductivity of the filling material;
• performing a second thinning process over the filling material;
• and
• bonding a carrier to the thermal conductive layer and the filling material.