Back to results
US 2026/0101731 A1Published application
Power Semiconductor Apparatus and Bonding Method Thereof
AssigneeDiodes Incorporated
InventorDuane Wilcoxen
Life of this patent
Estimating the term…
Abstract
An apparatus includes a backside supporting layer having a first thickness, an adhesive layer over the backside supporting layer, a metal layer over the adhesive layer, wherein the metal layer functions as a backside connector, a semiconductor substrate layer over the metal layer, wherein the semiconductor substrate active layer has a second thickness, and a plurality of front side connectors, wherein active circuits in the semiconductor substrate layer over are electrically coupled between the plurality of front side connectors and the metal layer.
Claims20
A semiconductor device comprising:
- a backside supporting layer;
- an adhesive layer on and in direct contact with the backside supporting layer;
- a cap layer on and in direct contact with the adhesive layer;
- a metal layer on and in direct contact with the cap layer;
- a semiconductor substrate on and in direct contact with the metal layer;
- a passivation layer over the semiconductor substrate;
- and
- a plurality of connectors over the semiconductor substrate and extending through the passivation layer.
5 more elements
A device comprising:
- a backside supporting layer having a first thickness;
- an adhesive layer over the backside supporting layer;
- a metal layer over the adhesive layer, wherein the metal layer functions as a backside connector;
- a semiconductor substrate layer over the metal layer, wherein the semiconductor substrate layer has a second thickness;
- and
- a plurality of front side connectors, wherein active circuits in the semiconductor substrate layer over are electrically coupled between the plurality of front side connectors and the metal layer.
3 more elements
An apparatus comprising:
- a backside supporting layer having a first thickness;
- an adhesive layer over the backside supporting layer;
- a metal layer over the cap layer, wherein the metal layer has a second thickness;
- and
- a semiconductor substrate layer over the metal layer, wherein the semiconductor substrate layer has a third thickness, wherein:
- the first thickness of the backside supporting layer is at least four times greater than the third thickness of the semiconductor substrate layer;
- and
- the third thickness of the semiconductor substrate layer is greater than the second thickness of the metal layer.
5 more elements
Dependencies are inferred from the claim text.