Material for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, patterning process, compound for forming organic film, and aromatic carboxylic anhydride

Abstract

A material for forming an organic film, containing: (A) compound represented by formula (1A); and (B) organic solvent, where W1 represents n1-valent organic group, “n1” represents integer of 2 to 4, X1 represents group represented by formula (1B), “n2” represents 1 or 2, and R1 represents any group represented by formulae (1C). A compound for forming organic film that cures under film formation conditions in inert gas as well as in air, and makes it possible to form organic film that has heat resistance, properties of filling and planarizing pattern formed in substrate, and favorable film-formability on and adhesiveness to substrate; material for forming organic film, containing compound; substrate for manufacturing semiconductor device including material; method for forming organic film, using material; patterning process using material; and aromatic carboxylic anhydride having crosslinkable moiety, expected to be an industrially useful raw material such as electronic materials and aerospace materials.

Dependencies are inferred from the claim text.