Film deposition method and film deposition apparatus

A film deposition apparatus for depositing a metal film on an inner surface of each of a plurality of micro-recessed parts formed in a surface of an object to be deposited, the object being disposed in a vacuum chamber, comprising,

• a gas introducer introducing a sputtering gas containing a rare gas into a vacuum chamber of a vacuum atmosphere;
• a sputtering power source that supplies an electric power with a negative potential to a target made of a metal;
• a reflector plate that is disposed to surround a space between the object to be deposited and the target and to which a positive potential is applied;
• and
• a stage on which the object to be deposited is mounted and to which a high-frequency bias power is supplied from a high-frequency bias power source through an impedance matching device that matches an impedance of a plasma with an impedance on a side of the high-frequency bias power source,
• wherein the film deposition apparatus is configured that after the plasma is generated in a space in front of a sputtered surface of the target, while the introduction of the sputtering gas is stopped to generate a self-holding discharge under low pressure of pasma, the target is sputtered, and
• wherein the impedance matching device is configured by an electron matcher having at least one variable reactor to be electronically controlled, the impedance matching device being configured that the high-frequency bias power source intermittently supplies the high-frequency bias power.