# US 2026/0101637 A1 · Display device and method of manufacturing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2026/0101637 A1 - Document ID: US20260101637A1 - Status: Published application - Kind: A1 - Application number: 19/194,558 - Filed: 2025-04-30 - Published: 2026-04-09 - Earliest claimed: 2024-10-07 - Assignees: Samsung Display Co., Ltd. - Applicants: Samsung Display Co., LTD. - Inventors: SUNGJOON KWAK; JONGHYEON KANG; Byeongwan Kim; JEMIN LEE - Web page: https://patentgrep.com/patent/US20260101637A1 ## CPC - H10K 59/1216: {the pixel elements being capacitors} - H10K 59/1201: {Manufacture or treatment} - H10K 59/1213: {the pixel elements being TFTs} - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES ## Abstract A display device includes a thin film transistor positioned on a substrate and including a driving transistor, a capacitor electrically connected to the driving transistor, a light-emitting element electrically connected to the driving transistor, and a base metal layer respectively positioned between the substrate and the driving transistor and between the substrate and the capacitor. The base metal layer includes a first layer and a second layer sequentially laminated on the substrate, an end of the second layer is recessed inward from an end of the first layer and positioned on an upper surface of the first layer, and a protective layer including atoms of the first layer is positioned on a side surface of the first layer. ## Claims ### Claim 1 A display device comprising: a thin film transistor positioned on a substrate and including a driving transistor; a capacitor electrically connected to the driving transistor; a light-emitting element electrically connected to the driving transistor; and a base metal layer positioned between the substrate and the driving transistor and between the substrate and the capacitor, wherein the base metal layer includes a first layer and a second layer sequentially laminated on the substrate, an end of the second layer is recessed inward from an end of the first layer and is positioned on an upper surface of the first layer, and a protective layer including atoms of the first layer is positioned on a side surface of the first layer. ### Claim 2 (depends on 1) The display device of claim 1, wherein the first layer includes aluminum, and the protective layer includes aluminum and fluoride. ### Claim 3 (depends on 1) The display device of claim 1, wherein a thickness of the protective layer is in a range of about 5 nm to about 15 nm. ### Claim 4 (depends on 1) The display device of claim 1, wherein a gap between the end of the first layer and the end of the second layer is greater than 0 and less than 50 μm. ### Claim 5 (depends on 1) The display device of claim 1, wherein the second layer includes titanium. ### Claim 6 (depends on 1) The display device of claim 1, wherein the base metal layer further includes a third layer positioned between the substrate and the first layer, and the third layer and the second layer include a same material. ### Claim 7 (depends on 6) The display device of claim 6, wherein an end of the third layer is projected further outward than the end of the first layer, and the protective layer covers an outer surface of the end of the third layer. ### Claim 8 (depends on 1) The display device of claim 1, wherein a side surface of the base metal layer has a taper angle in a range of about 40° to about 60°. ### Claim 9 (depends on 1) The display device of claim 1, wherein the thin film transistor includes an active layer, a gate electrode, a source electrode, and a drain electrode, and at least one of the gate electrode, the source electrode, and the drain electrode and the base metal layer have a same structure. ### Claim 10 (depends on 9) The display device of claim 9, wherein the light-emitting element includes an organic light-emitting element, and the active layer includes an oxide semiconductor. ### Claim 11 A method of manufacturing a display device comprising: forming a base metal layer including a first base metal layer and a second base metal layer on a substrate; forming a thin film transistor on the substrate at a position overlapping the first base metal layer and forming a capacitor on the substrate at a position overlapping the second base metal layer in a plan view; and forming a light-emitting element electrically connected to the thin film transistor, wherein the forming of the base metal layer includes: a primary etching of sequentially laminating a first layer including aluminum and a second layer including titanium on the substrate and etching the first layer and the second layer; and a secondary etching of selectively etching the second layer, an end of the second layer is formed to be recessed inward more than an end of the first layer and positioned on an upper surface of the first layer, and a protective layer including aluminum and titanium is formed on a side surface of the first layer. ### Claim 12 (depends on 11) The method of claim 11, wherein the primary etching is performed by dry etching using a mixture of chlorine (Cl2) and boron trichloride (BCl3). ### Claim 13 (depends on 11) The method of claim 11, wherein the secondary etching is performed by dry etching using a mixture of carbon tetrafluoride (CF4) and chlorine (Cl2). ### Claim 14 (depends on 11) The method of claim 11, wherein a side surface of the base metal layer has a taper angle in a range of about 40° to about 60°. ### Claim 15 (depends on 11) The method of claim 11, wherein a gap between the end of the first layer and the end of the second layer is greater than 0 and less than 50 μm. ### Claim 16 (depends on 11) The method of claim 11, wherein a thickness of the protective layer is in a range of about 5 nm to about 15 nm. ### Claim 17 (depends on 11) The method of claim 11, wherein the forming of the base metal layer further includes forming a third layer including titanium between the first layer and the substrate. ### Claim 18 (depends on 17) The method of claim 17, wherein an end of the third layer is projected outward more than the end of the first layer, and the protective layer is formed to cover an outer surface of the end of the third layer. ### Claim 19 (depends on 11) The method of claim 11, wherein the thin film transistor includes an active layer, a gate electrode, a source electrode, and a drain electrode, and at least one of the gate electrode, the source electrode, and the drain electrode and the base metal layer have a same structure. ### Claim 20 An electronic device comprising: a processor that provides image data; a display device that displays an image based on the image data; a memory that stores the image data; and a power module that provides a power to the processor and the display device, wherein the display device comprises: a thin film transistor positioned on a substrate and including a driving transistor; a capacitor electrically connected to the driving transistor; a light-emitting element electrically connected to the driving transistor; and a base metal layer positioned between the substrate and the driving transistor and between the substrate and the capacitor, the base metal layer includes a first layer and a second layer sequentially laminated on the substrate, an end of the second layer is recessed inward from an end of the first layer and is positioned on an upper surface of the first layer, and a protective layer including atoms of the first layer is positioned on a side surface of the first layer.