Group iii-n device with silicided substrate contact
OwnerDong Seup Lee, Hiroshi Yamasaki +2inventors
InventorsDong Seup Lee, Hiroshi Yamasaki, Masahiko Higashi, Takayuki Enda
Life of this patent
Estimating the term…
Abstract
Semiconductor devices including a silicided substrate contact are described. In one example, a semiconductor device comprises a semiconductor substrate and a heterojunction structure over the semiconductor substrate, where the heterojunction structure includes a III-N buffer layer over the semiconductor substrate and a III-N barrier layer over the III-N buffer layer. A substrate contact extends through the heterojunction structure and to the semiconductor substrate, where the substrate contact includes a silicide layer contacting the semiconductor substrate.
Claims20
A semiconductor device, comprising:
- a semiconductor substrate;
- a heterojunction structure over the semiconductor substrate, the heterojunction structure including a III-N buffer layer over the semiconductor substrate and a III-N barrier layer over the III-N buffer layer;
- and
- a substrate contact extending through the heterojunction structure and to the semiconductor substrate, the substrate contact including a silicide layer.
A method of fabricating a III-N semiconductor device, comprising:
- forming a heterojunction structure over a semiconductor substrate, the heterojunction structure including a III-N buffer layer over the semiconductor substrate and a III-N barrier layer over the III-N buffer layer;
- forming a dielectric layer over the heterojunction structure;
- forming a trench through the dielectric layer and extending to the semiconductor substrate;
- lining the trench with a refractory metal layer;
- and
- annealing the refractory metal layer to form a silicided bottom in the trench.
Dependencies are inferred from the claim text.