# US 2026/0101531 A1 · Semiconductor structure and manufacturing method thereof

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- Number: US 2026/0101531 A1
- Document ID: US20260101531A1
- Status: Published application
- Kind: A1
- Application number: 18/905,488
- Filed: 2024-10-03
- Published: 2026-04-09
- Earliest claimed: 2024-10-03
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Company, Ltd.
- Inventors: Wei-Ting CHANG; Ching Yu CHEN; JIANG-HE XIE
- Web page: https://patentgrep.com/patent/US20260101531A1

## CPC

- H10D 30/475: {having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs}
- H10D 62/343: {Gate regions of field-effect devices having PN junction gates}
- H10D 30/015: {of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT}
- H10D 62/357: {of FETs}
- H10D 62/60: Impurity distributions or concentrations
- H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN}
- H10D 62/854: further characterised by the dopants
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a nucleation layer, a strain relief layer, a P-doping GaN layer, a GaN channel layer and an AlGaN barrier layer. The strain relief layer is disposed on the nucleation layer. The strain relief layer has a plurality of modulated P-doping concentrations. The P-doping GaN layer is disposed on the strain relief layer. The GaN channel layer is disposed on the P-doping GaN layer. The AlGaN barrier layer is disposed on the GaN channel layer.

## Claims

### Claim 1

A semiconductor structure, comprising:
a nucleation layer;
a strain relief layer, disposed on the nucleation layer, wherein the strain relief layer has a plurality of modulated P-doping concentrations;
a P-doping GaN layer, disposed on the strain relief layer;
a GaN channel layer, disposed on the P-doping GaN layer; and
an AlGaN barrier layer, disposed on the GaN channel layer.

### Claim 2 (depends on 1)

The semiconductor structure according to claim 1, wherein the modulated P-doping concentrations are staggered up and down.

### Claim 3 (depends on 1)

The semiconductor structure according to claim 1, wherein a ratio of two of the modulated P-doping concentrations is more than 2.

### Claim 4 (depends on 1)

The semiconductor structure according to claim 1, wherein one of the modulated P-doping concentrations is higher than two of the modulated P-doping concentrations.

### Claim 5 (depends on 1)

The semiconductor structure according to claim 1, wherein two of the modulated P-doping concentrations is larger than three of the modulated P-doping concentrations.

### Claim 6 (depends on 1)

The semiconductor structure according to claim 1, wherein two of the modulated P-doping concentrations is higher than one of the modulated P-doping concentrations.

### Claim 7 (depends on 1)

The semiconductor structure according to claim 1, wherein three of the modulated P-doping concentrations is higher than two of the modulated P-doping concentrations.

### Claim 8 (depends on 1)

The semiconductor structure according to claim 1, wherein two of the modulated P-doping concentrations is higher than three of the modulated P-doping concentrations.

### Claim 9 (depends on 1)

The semiconductor structure according to claim 1, wherein one of the modulated P-doping concentrations is higher than a default P-doping concentration of the P-doping GaN layer.

### Claim 10 (depends on 1)

The semiconductor structure according to claim 1, wherein the strain relief layer is doped C, Fe, Mg or Mn to have the modulated P-doping concentrations.

### Claim 11

A semiconductor structure, comprising:
a nucleation layer;
a strain relief layer, disposed on the nucleation layer, wherein the strain relief layer has more than one p-p−¿¿, p-i, or p-n junctions;
a P-doping GaN layer, disposed on the strain relief layer;
a GaN channel layer, disposed on the P-doping GaN layer; and
an AlGaN barrier layer, disposed on the GaN channel layer.

### Claim 12 (depends on 11)

The semiconductor structure according to claim 11, wherein the strain relief layer is doped C, Fe, Mg or Mn to have the more than one p-p−¿¿, p-i, or p-n junctions.

### Claim 13

A manufacturing method of a semiconductor structure, comprising:
forming a nucleation layer;
forming a strain relief layer on the nucleation layer, wherein the strain relief layer is doped P-type dopants to have a plurality of modulated P-doping concentrations;
forming a P-doping GaN layer on the strain relief layer;
forming a GaN channel layer on the P-doping GaN layer; and
forming an AlGaN barrier layer on the GaN channel layer.

### Claim 14 (depends on 13)

The manufacturing method of the semiconductor structure according to claim 13, wherein the step of forming the strain relief layer, pressure, growth rate, temperature or content of precursor is controlled to intrinsically dope the P-type dopants.

### Claim 15 (depends on 13)

The manufacturing method of the semiconductor structure according to claim 13, wherein the step of forming the strain relief layer, a source with the P-type dopants is injected into chamber to extrinsically dope the P-type dopants.

### Claim 16 (depends on 13)

The manufacturing method of the semiconductor structure according to claim 13, wherein the step of forming the strain relief layer, the P-type dopants are implanted into the strain relief layer.

### Claim 17 (depends on 13)

The manufacturing method of the semiconductor structure according to claim 13, wherein the strain relief layer is doped the P-type dopants to have more than one p-p−¿¿, p-i, or p-n junctions.

### Claim 18 (depends on 13)

The manufacturing method of the semiconductor structure according to claim 13, wherein the modulated P-doping concentrations are staggered up and down.

### Claim 19 (depends on 13)

The manufacturing method of the semiconductor structure according to claim 13, wherein a ratio of two of the modulated P-doping concentrations is more than 2.

### Claim 20 (depends on 13)

The manufacturing method of the semiconductor structure according to claim 13, wherein one of the modulated P-doping concentrations is larger than two of the modulated P-doping concentrations.