Extreme ultraviolet light generation apparatus and electronic device manufacturing method

An electronic device manufacturing method, comprising:

• generating extreme ultraviolet light using an extreme ultraviolet light generation apparatus;
• outputting the extreme ultraviolet light to an exposure apparatus;
• and
• exposing a photosensitive substrate to the extreme ultraviolet light in the exposure apparatus to manufacture an electronic device,
• the extreme ultraviolet light generation apparatus including:
• a chamber surrounding a first space;
• a partition wall surrounding a second space and including a first opening allowing the first space to communicate with the second space;
• a target supply unit configured to supply a target including a target substance to a plasma generation region in the second space;
• an EUV light concentrating mirror configured to concentrate the extreme ultraviolet light generated in the plasma generation region;
• a target collection unit configured to collect the target that has passed through the plasma generation region and adhesion debris of the target substance that has adhered to an inner surface of the partition wall;
• a temperature adjuster configured to heat the partition wall;
• and
• a first switch configured to switch opening and closing of the first opening.

An electronic device manufacturing method, comprising:

• inspecting a defect of a mask by irradiating the mask in an inspection apparatus with extreme ultraviolet light generated by an extreme ultraviolet light generation apparatus;
• selecting a mask using a result of the inspection;
• and
• exposing and transferring a pattern formed on the selected mask onto a photosensitive substrate,
• the extreme ultraviolet light generation apparatus including:
• a chamber surrounding a first space;
• a partition wall surrounding a second space and including a first opening allowing the first space to communicate with the second space;
• a target supply unit configured to supply a target including a target substance to a plasma generation region in the second space;
• an EUV light concentrating mirror configured to concentrate the extreme ultraviolet light generated in the plasma generation region;
• a target collection unit configured to collect the target that has passed through the plasma generation region and adhesion debris of the target substance that has adhered to an inner surface of the partition wall;
• a temperature adjuster configured to heat the partition wall;
• and
• a first switch configured to switch opening and closing of the first opening.