Semiconductor laser

Abstract

Some implementations described herein include a semiconductor laser having a distribution of a coupling coefficient. The semiconductor laser includes a substrate, and a semiconductor multilayer. The semiconductor multilayer includes an active layer, a grating layer, and an optical confinement adjustment layer which is flat. The semiconductor multilayer forms a first region and a second region. The optical confinement adjustment layer includes a high refractive index region, and a low refractive index region having a refractive index lower than a refractive index of the high refractive index region. The high refractive index region is arranged in any one of the first region or the second region and the low refractive index region is arranged in another one of the first region or the second region so that a first coupling coefficient of the first region becomes larger than a second coupling coefficient of the second region.

Dependencies are inferred from the claim text.