# US 2026/0100336 A1 · Apparatus and method of treating substrate

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2026/0100336 A1
- Document ID: US20260100336A1
- Status: Published application
- Kind: A1
- Application number: 19/406,387
- Filed: 2025-12-02
- Published: 2026-04-09
- Earliest claimed: 2022-03-15
- Assignees: Semes Co., Ltd.
- Applicants: Semes Co., Ltd.
- Inventors: Seungjun OH; Jinwoo NAM; Janghee LEE; Young Hak PARK; Jin Woo CHOI; Ahn Na SEO
- Web page: https://patentgrep.com/patent/US20260100336A1

## CPC

- H01J 37/3244: {Gas supply means}
- H01J 37/20: Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
- H01J 37/32091: {the radio frequency energy being capacitively coupled to the plasma}
- H01J 37/321: {the radio frequency energy being inductively coupled to the plasma}
- H01J 37/32192: {Microwave generated discharge (H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence)}
- H01J 2237/334: Etching
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)

## Abstract

The present invention provides a method of treating a substrate. The method may include: a first treatment operation in which hydrogen radicals are transferred to a substrate adjusted to have a first temperature to treat the substrate; and a second treatment operation in which the hydrogen radicals are transferred to the substrate adjusted to have a second temperature that is different from the first temperature to treat the substrate.

## Claims

### Claim 1

A method of treating a substrate, the method comprising:
a first treatment operation in which hydrogen radicals are transferred to a substrate of which a temperature is adjusted to a first temperature to treat the substrate; and
a second treatment operation in which the hydrogen radicals are transferred to the substrate of which the temperature is adjusted to a second temperature that is different from the first temperature to treat the substrate,
wherein a pattern having a pin structure is formed on the substrate and impurities containing germanium (Ge) is attached to the pattern,
wherein in the first treatment operation, the impurities are removed, and
wherein the second treatment operation is performed after the first treatment operation, and in the second treatment operation, surface roughness of the substrate that is made of a material containing silicon (Si) is improved.

### Claim 2 (depends on 1)

The method of claim 1, wherein the second temperature is higher than the first temperature.

### Claim 3 (depends on 2)

The method of claim 2, wherein the first temperature is 50° C. or higher and 300° C. or lower.

### Claim 4 (depends on 3)

The method of claim 3, wherein the second temperature is 400° C. or higher and 700° C. or lower.

### Claim 5 (depends on 1)

The method of claim 1, wherein a pressure within a vacuum chamber providing a space in which the substrate is treated is 10 mTorr or more and 4 Torr or less.

### Claim 6 (depends on 1)

The method of claim 1, wherein plasma including the hydrogen radicals is any one of direct plasma and remote plasma.