# US 2026/0100304 A1 · Magnetic device capable of field-free spin-orbit torque and method for manufacturing same

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- Number: US 2026/0100304 A1
- Document ID: US20260100304A1
- Status: Published application
- Kind: A1
- Application number: 18/975,939
- Filed: 2024-12-10
- Published: 2026-04-09
- Earliest claimed: 2024-10-07
- Assignees: Korea Advanced Institute of Science and Technology
- Applicants: Korea Advanced Institute of Science and Technology
- Inventors: Byong Guk PARK; Nam Hee KIM; Dong Hyeon HAN
- Web page: https://patentgrep.com/patent/US20260100304A1

## CPC

- G11C 11/1675: {Writing or programming circuits or methods}
- H01F 10/329: {Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect}
- G11C 11/161: {details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell}
- G11C 11/18: using Hall-effect devices
- H01F 10/3254: {the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]}
- H01F 10/3286: {Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy}
- H01F 41/32: for applying conductive, insulating or magnetic material on a magnetic film {, specially adapted for a thin magnetic film}
- H10N 50/01: Manufacture or treatment
- H10N 50/10: Magnetoresistive devices
- H10N 50/85: Materials of the active region
- H10N 52/00: Hall-effect devices (integrated devices or assemblies of multiple devices H10N59/00)
- B82Y 25/00: Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
- G11C: STATIC STORES (semiconductor memory devices H10B)
- H01F: MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES

## Abstract

A magnetic device capable of field-free spin-orbit torque includes a fixed ferromagnetic layer, a free ferromagnetic layer, and an insulating layer positioned between the fixed ferromagnetic layer and the free ferromagnetic layer, wherein the free ferromagnetic layer includes an in-plane magnetic anisotropy ferrimagnetic layer, a perpendicular magnetic anisotropy free ferromagnetic layer, and a non-magnetic layer positioned between the in-plane magnetic anisotropy ferrimagnetic layer and the perpendicular magnetic anisotropy free ferromagnetic layer.

## Claims

### Claim 1

A magnetic device capable of field-free spin-orbit torque, comprising:
a fixed ferromagnetic layer;
a free ferromagnetic layer; and
an insulating layer positioned between the fixed ferromagnetic layer and the free ferromagnetic layer,
wherein the free ferromagnetic layer comprises:
an in-plane magnetic anisotropy ferrimagnetic layer;
a perpendicular magnetic anisotropy free ferromagnetic layer; and
a non-magnetic layer positioned between the in-plane magnetic anisotropy ferrimagnetic layer and the perpendicular magnetic anisotropy free ferromagnetic layer.

### Claim 2 (depends on 1)

The magnetic device capable of field-free spin-orbit torque of claim 1, wherein the in-plane magnetic anisotropy ferrimagnetic layer has an in-plane saturation magnetization (Ms) value equal to or less than 500 emu/cc.

### Claim 3 (depends on 1)

The magnetic device capable of field-free spin-orbit torque of claim 1, wherein the in-plane magnetic anisotropy ferrimagnetic layer has a thickness ranging from 2 to 20 nm.

### Claim 4 (depends on 1)

The magnetic device capable of field-free spin-orbit torque of claim 1, wherein a material constituting the in-plane magnetic anisotropy ferrimagnetic layer is represented by Chemical Formula 1:
wherein the x and the y represent a composition ratio of Co and Gd, respectively, with a sum of the x and the y being 100.

### Claim 5 (depends on 4)

The magnetic device capable of field-free spin-orbit torque of claim 4, wherein the x is a number in a range from 60 to 90.

### Claim 6 (depends on 1)

The magnetic device capable of field-free spin-orbit torque of claim 1, wherein the non-magnetic layer comprises at least one selected from a group consisting of alloys comprising Pt, Ta, W, Ti, and combinations thereof.

### Claim 7 (depends on 1)

The magnetic device capable of field-free spin-orbit torque of claim 1, wherein an interfacial spin current of the in-plane magnetic anisotropy ferrimagnetic layer and the non-magnetic layer applies a torque to the perpendicular magnetic anisotropy free ferromagnetic layer, thereby switching a magnetization direction of the perpendicular magnetic anisotropy free ferromagnetic layer.

### Claim 8

A method for manufacturing a magnetic device capable of field-free spin-orbit torque, the method comprising:
forming a fixed ferromagnetic layer;
forming an insulating layer on the fixed ferromagnetic layer; and
forming a free ferromagnetic layer on the insulating layer,
wherein the forming of the free ferromagnetic layer comprises:
forming a perpendicular magnetic anisotropy free ferromagnetic layer;
forming a non-magnetic layer on the perpendicular magnetic anisotropy free ferromagnetic layer; and
forming an in-plane magnetic anisotropy ferrimagnetic layer on the non-magnetic layer.

### Claim 9 (depends on 8)

The method of claim 8, wherein in the forming of the in-plane magnetic anisotropy ferrimagnetic layer, the in-plane magnetic anisotropy ferrimagnetic layer has an in-plane saturation magnetization (Ms) value equal to or less than 500 emu/cc.

### Claim 10 (depends on 8)

The method of claim 8, wherein in the forming of the in-plane magnetic anisotropy ferrimagnetic layer, the in-plane magnetic anisotropy ferrimagnetic layer has a thickness ranging from 2 to 20 nm.

### Claim 11 (depends on 8)

The method of claim 8, wherein in the forming of the in-plane magnetic anisotropy ferrimagnetic layer, the in-plane magnetic anisotropy ferrimagnetic layer is composed of a material represented by Chemical Formula 1:
wherein the x and the y represent a composition ratio of Co and Gd, respectively, with a sum of the x and the y being 100.

### Claim 12 (depends on 11)

The method of claim 11, wherein the x is a number in a range from 60 to 90.

### Claim 13 (depends on 8)

The method of claim 8, wherein the forming of the free ferromagnetic layer on the insulating layer is performed by at least one scheme selected from a group consisting of sputtering, molecular beam epitaxy (MBE), atomic layer deposition (ALD), physical vapor deposition (PVD), and chemical vapor deposition (CVD).