# US 2026/0100212 A1 · Magnetic memory and operation method of the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2026/0100212 A1 - Document ID: US20260100212A1 - Status: Published application - Kind: A1 - Application number: 18/981,631 - Filed: 2024-12-15 - Published: 2026-04-09 - Earliest claimed: 2024-10-09 - Assignees: Industrial Technology Research Institute - Applicants: Industrial Technology Research Institute - Inventors: Ziaur Rahaman Shakh; Yao-Jen Chang; Jeng-Hua Wei - Web page: https://patentgrep.com/patent/US20260100212A1 ## CPC - G11C 11/1675: {Writing or programming circuits or methods} - G11C 11/161: {details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell} - G11C 11/1659: {Cell access} - G11C 11/1673: {Reading or sensing circuits or methods} - H10B 61/20: {comprising components having three or more electrodes, e.g. transistors} - H10N 50/10: Magnetoresistive devices - H10N 50/85: Materials of the active region - G11C: STATIC STORES (semiconductor memory devices H10B) - H10B: ELECTRONIC MEMORY DEVICES - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR ## Abstract A magnetic memory and an operation method thereof are provided. The magnetic memory includes a heavy metal layer and at least one magnetic tunnel junction (MTJ) formed on the heavy metal layer. The MTJ includes a free layer, a pinned layer, a tunneling barrier layer, a first diffusion barrier layer and a second diffusion barrier layer. The free layer is located on the heavy metal layer. The pinned layer is located on the free layer. The tunneling barrier layer is located between the free layer and the pinned layer. The first diffusion barrier layer is located between the tunneling barrier layer and the free layer. The second diffusion barrier layer is located between the tunneling barrier layer and the pinned layer. The magnetic memory has excellent reliability and significantly increases the number of cycles of memory write and erase functions. ## Claims ### Claim 1 A magnetic memory, comprising: a heavy metal layer and at least one magnetic tunnel junction (MTJ) formed on the heavy metal layer, wherein: the at least one MTJ comprises: a free layer, located on the heavy metal layer; a pinned layer, located on the free layer; a tunneling barrier layer, located between the free layer and the pinned layer; a first diffusion barrier layer, located between the tunneling barrier layer and the free layer; and a second diffusion barrier layer, located between the tunneling barrier layer and the pinned layer. ### Claim 2 (depends on 1) The magnetic memory according to claim 1, wherein the first diffusion barrier layer is in direct contact with the tunneling barrier layer. ### Claim 3 (depends on 1) The magnetic memory according to claim 1, wherein the second diffusion barrier layer is in direct contact with the tunneling barrier layer. ### Claim 4 (depends on 1) The magnetic memory according to claim 1, wherein a thickness of the first diffusion barrier layer is less than 1 nm. ### Claim 5 (depends on 1) The magnetic memory according to claim 1, wherein a thickness of the second diffusion barrier layer is less than 1 nm. ### Claim 6 (depends on 1) The magnetic memory according to claim 1, wherein the first diffusion barrier layer and the second diffusion barrier layer are metal layers or metal oxide layers. ### Claim 7 (depends on 6) The magnetic memory according to claim 6, wherein materials of the first diffusion barrier layer and the second diffusion barrier layer individually comprise iron (Fe), tantalum nitride (TaN), ruthenium (Ru) or tungsten (W). ### Claim 8 (depends on 6) The magnetic memory according to claim 6, wherein materials of the first diffusion barrier layer and the second diffusion barrier layer individually comprise titanium oxide (TiOx), tungsten oxide (WOx), tantalum oxide (TaOx) or ruthenium oxide (RuOx). ### Claim 9 (depends on 1) The magnetic memory according to claim 1, further comprising an upper electrode that is connected to the pinned layer of the at least one MTJ. ### Claim 10 (depends on 1) An operation method of the magnetic memory according to claim 1, comprising: performing a write operation to the at least one MTJ that has been selected, comprising: applying a first write voltage to the heavy metal layer and applying a second write voltage to the pinned layer; and performing a recovery operation to the at least one MTJ that has been selected, comprising: applying a recovery voltage to the pinned layer or the heavy metal layer, wherein the recovery voltage is greater than the second write voltage. ### Claim 11 (depends on 10) The operation method of the magnetic memory according to claim 10, wherein the first write voltage is greater than the second write voltage, and the recovery voltage is greater than the first write voltage. ### Claim 12 (depends on 10) The operation method of the magnetic memory according to claim 10, wherein the recovery operation is performed after a resistance value of the at least one MTJ in an anti-parallel magnetization state suddenly drops. ### Claim 13 (depends on 10) The operation method of the magnetic memory according to claim 10, wherein the recovery operation is periodically performed. ### Claim 14 (depends on 10) The operation method of the magnetic memory according to claim 10, further comprising: performing a read operation to the at least one MTJ that has been selected, and the read operation comprises applying a read voltage to the pinned layer.