Area selective deposition of aluminum based films using alkyl aluminum amidinate precursors
AssigneeEntegris, Inc.
InventorsDrew Michael Hood, Rong Zhao
Life of this patent
Estimating the term…
Abstract
Area selective deposition of aluminum-based films using alkyl aluminum amidinate precursors and methods thereof are provided. Area selective deposition comprises depositing an alkyl aluminum amidinate precursor on a substrate with a first surface portion comprising a metal and a second surface portion comprising a non-metal to form an aluminum-based film on the substrate. The aluminum-based film will be located on the second surface portion of the substrate and when the aluminum-based film is located on the first surface portion, a ratio of an average thickness of the film on the first surface portion to an average thickness of the film on the second surface portion is less than 1.
Claims20
A method for forming a vapor deposition precursor, the method comprising:
- contacting an aluminum trichloride, a Grignard reagent, and a carbodiimide compound to form the vapor deposition precursor,
- wherein the vapor deposition precursor comprises an aluminum amidinate.
A composition comprising:
- a vapor deposition precursor comprising an aluminum amidinate,
- wherein the aluminum amidinate having the characteristics defined by the following process step:
- contacting an aluminum chloride, a Grignard reagent, and a carbodiimide compound to form the vapor deposition precursor.
Dependencies are inferred from the claim text.