Substrate processing apparatus, recording medium, method of processing substrate, and method of manufacturing semiconductor device

A substrate processing apparatus, comprising:

• a film formation inhibition gas supply system configured to supply a film formation inhibition gas to a substrate;
• a film-forming gas supply system configured to supply a film-forming gas to the substrate;
• a halogen-free substance supply system configured to supply a halogen-free substance to the substrate;
• and
• a controller configured to be capable of controlling operation of the substrate processing apparatus to perform:
• (a) supplying the film formation inhibition gas to the substrate, which includes a first base and a second base on a surface of the substrate, to form a film formation inhibition layer on a surface of the first base;
• (b) supplying the film-forming gas to the substrate after forming the film formation inhibition layer on the surface of the first base, to form a film on a surface of the second base;
• and
• (c) supplying the halogen-free substance, which chemically reacts with the film formation inhibition layer and the film, to the substrate after forming the film on the surface of the second base, in a non-plasma atmosphere.