Light detecting device

Abstract

A light detecting device includes a first semiconductor layer, an absorption layer located on the first semiconductor layer, a second semiconductor layer located on the absorption layer, a filter structure located on the second semiconductor layer, an opening formed in the filter structure and an electrode structure disposed on the filter structure. The electrode structure connects the second semiconductor layer through the opening. The filter structure includes a plurality of first layers and a plurality of second layers which are alternately stacked, and the plurality of the first layers includes an uppermost first layer with a first refractive index and one of the plurality of second layers has a second refractive index larger than the first refractive index. The uppermost first layer is located between the electrode structure and the plurality of second layers and directly contacts the electrode structure.

Dependencies are inferred from the claim text.