# US 2026/0096089 A1 · Semiconductor device and method of fabricating the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2026/0096089 A1 - Document ID: US20260096089A1 - Status: Published application - Kind: A1 - Application number: 19/289,837 - Filed: 2025-08-04 - Published: 2026-04-02 - Earliest claimed: 2024-09-27 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Samsung Electronics Co., Ltd. - Inventors: Kyooho JUNG; Donghyun KIM; Jooho LEE; Duk Hyun CHOE - Web page: https://patentgrep.com/patent/US20260096089A1 ## CPC - H10B 12/315: {with the capacitor higher than a bit line} - H10B 12/033: {the capacitor extending over the transistor} - H10B 12/31: {having a storage electrode stacked over the transistor} - H10B 12/482: {Bit lines} - H10B 12/488: {Word lines} - H10B 12/50: {Peripheral circuit region structures} - H10D 1/716: {having vertical extensions} - H10B: ELECTRONIC MEMORY DEVICES - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract Provided is a semiconductor device including a first electrode extending in a first direction on a substrate, a capping film covering a first surface of the first electrode intersecting with the first direction, a dielectric film surrounding a second surface of the first electrode intersecting with the first surface, and a second electrode covering the capping film and the dielectric film. ## Claims ### Claim 1 A semiconductor device comprising: a first electrode extending in a first direction; a capping film covering a first surface of the first electrode, the first surface intersecting with the first direction; a dielectric film surrounding a second surface of the first electrode, the second surface intersecting with the first surface; and a second electrode covering the capping film and the dielectric film. ### Claim 2 (depends on 1) The semiconductor device of claim 1, wherein the first electrode does not overlap with the dielectric film in the first direction. ### Claim 3 (depends on 1) The semiconductor device of claim 1, further comprising: a supporter structure connected to the dielectric film and surrounded by the dielectric film and the second electrode. ### Claim 4 (depends on 3) The semiconductor device of claim 3, wherein the supporter structure includes a first supporter and a second supporter which are spaced apart in the first direction, and wherein the second electrode fills a space between the first supporter and the second supporter. ### Claim 5 (depends on 4) The semiconductor device of claim 4, wherein the second electrode is in direct contact with the first supporter and the second supporter. ### Claim 6 (depends on 3) The semiconductor device of claim 3, wherein the second electrode covers a first surface of the supporter structure, the first surface of the supporter structure facing the first direction, and wherein a second surface of the supporter structure is in contact with the dielectric film, the second surface facing a second direction, the second direction intersecting the first direction. ### Claim 7 (depends on 1) The semiconductor device of claim 1, wherein at least a portion of the capping film is surrounded by the dielectric film. ### Claim 8 (depends on 7) The semiconductor device of claim 7, wherein, in the first direction, the capping film overlaps with the first electrode and does not overlap with the dielectric film. ### Claim 9 (depends on 7) The semiconductor device of claim 7, wherein, in a second direction intersecting with the first direction, a width of the capping film and a width of the first electrode have a same width. ### Claim 10 (depends on 1) The semiconductor device of claim 1, wherein, in the first direction, the capping film overlaps with the first surface and the dielectric film. ### Claim 11 (depends on 10) The semiconductor device of claim 10, wherein, in a second direction intersecting with the first direction, a width of the capping film is greater than a width of the first electrode. ### Claim 12 (depends on 1) The semiconductor device of claim 1, wherein a length of the second surface in the first direction is greater than a width of the first surface in a second direction, the second direction intersecting with the first direction. ### Claim 13 A method of fabricating a semiconductor device, the method comprising: forming a trench penetrating a mold structure in a first direction; forming a dielectric film on an inner sidewall of the trench; forming a first electrode on the dielectric film within the trench; forming a capping film covering the first electrode within the trench; removing at least a portion of the mold structure; and forming a second electrode on the dielectric film and the capping film. ### Claim 14 (depends on 13) The method of claim 13, wherein the forming of the dielectric film on the inner sidewall of the trench includes: forming the dielectric film extending along a profile of the trench; and removing a portion of the dielectric film formed on a bottom surface of the trench. ### Claim 15 (depends on 13) The method of claim 13, wherein the mold structure includes a supporter structure, and wherein the removing of at least the portion of the mold structure includes maintaining the supporter structure. ### Claim 16 (depends on 15) The method of claim 15, wherein the forming of the second electrode includes forming the second electrode such that the second electrode covers the dielectric film, the capping film, and the supporter structure. ### Claim 17 (depends on 15) The method of claim 15, wherein the forming of the dielectric film includes forming the dielectric film to cover a surface of the supporter structure exposed to the inner sidewall of the trench. ### Claim 18 (depends on 13) The method of claim 13, wherein the forming the capping film includes forming the capping film such that at least a portion of the capping film is surrounded by the dielectric film within the trench. ### Claim 19 (depends on 13) The method of claim 13, wherein the forming of the first electrode includes forming the first electrode such that, in the first direction, a height of the first electrode is less than a height of the dielectric film within the trench. ### Claim 20 A semiconductor device comprising: a first electrode extending in a first direction; a capping film covering a first surface of the first electrode, the first surface intersecting with the first direction; a dielectric film covering a second surface of the first electrode, the second surface intersecting with the first surface; a second electrode covering the capping film and the dielectric film; and a plurality of supporters spaced apart in the first direction and connected to the dielectric film, wherein the dielectric film separates the first electrode from the plurality of supporters, the second electrode fills a space between the plurality of supporters, and the plurality of supporters do not overlap with the dielectric film in the first direction.