Substrate processing apparatus

A substrate processing apparatus, comprising:

• a chamber configured to maintain a deposition process;
• a substrate support inside the chamber and configured to support a substrate;
• a target, within the chamber and facing the substrate;
• a target holder connected to the target;
• a permanent magnet adjacent to the target holder;
• a non-sinusoidal bias supply configured to provide a periodic non-sinusoidal bias to the substrate support;
• a DC power supply configured to apply a DC power to the target through the target holder;
• and
• a controller configured to control a waveform of the periodic non-sinusoidal bias,
• wherein the periodic non-sinusoidal bias includes, within one cycle, a pulse period during which a voltage is constantly maintained, and a ramp period during which the voltage gradually changes, and
• wherein the controller is configured to control a non-sinusoidal parameter including a positive voltage value and a negative voltage value of the pulse period, a voltage value of the ramp period, and a voltage application time.

A substrate processing apparatus, comprising:

• a chamber configured to maintain a deposition process;
• a substrate support inside the chamber and configured to support a substrate;
• a target within the chamber and facing the substrate;
• a target holder connected to the target;
• a permanent magnet adjacent to the target holder;
• a non-sinusoidal bias supply configured to provide a periodic non-sinusoidal bias to the substrate support;
• a non-sinusoidal filter between the non-sinusoidal bias supply and the substrate support and configured to selectively filter a frequency component of the periodic non-sinusoidal bias;
• a DC power supply configured to apply a DC power to the target through the target holder;
• an RF bias supply configured to provide an RF bias to the target holder or to the substrate support;
• and
• a controller configured to control a waveform of the periodic non-sinusoidal bias,
• wherein the periodic non-sinusoidal bias includes, within one cycle, a pulse period during which a voltage is constantly maintained, and a ramp period during which the voltage gradually changes, and
• wherein the controller is configured to control a non-sinusoidal parameter including a positive voltage value and a negative voltage value of the pulse period, a voltage value of the ramp period, and a voltage application time.