Substrate processing apparatus and operating method thereof

A substrate processing apparatus comprising:

• a chamber;
• a pedestal in the chamber and configured to support a substrate;
• a first showerhead in the chamber and configured to supply a plurality of gases to a rear surface of the substrate;
• a first gas supply configured to provide a first gas, among the plurality of gases, through the first showerhead to the rear surface of the substrate;
• a second gas supply configured to provide a second gas, among the plurality of gases, through the first showerhead to the rear surface of the substrate;
• a first purge gas supply configured to provide a first purge gas, among the plurality of gases, through the first showerhead to the rear surface of the substrate;
• and
• an exhaust connected to the first showerhead,
• wherein the first showerhead comprises n equally-divided areas, and a boundary area between adjacent ones of the n equally-divided areas, wherein n is a natural number greater than or equal to 2,
• wherein each of the n equally-divided areas comprises a center area, an edge area, and a sub-boundary area between the center area and the edge area,
• wherein the first gas supply is configured to supply the first gas through one from among the center area and the edge area of each of the n equally-divided areas,
• wherein the second gas supply is configured to supply the second gas through the other from among the center area and the edge area of each of the n equally-divided areas,
• wherein the first purge gas supply is configured to provide the first purge gas to the rear surface of the substrate through the boundary area and the sub-boundary area, and
• wherein the exhaust is configured to exhaust the first gas, the second gas, and the first purge gas through the boundary area and the sub-boundary area.

A method for operating a substrate processing apparatus, the method comprising:

• simultaneously forming a tensile stress film and a compressive stress film on a rear surface of a substrate, wherein the substrate is supported by a pedestal in a chamber of the substrate processing apparatus,
• wherein the simultaneously forming comprises simultaneously:
• providing a first gas, for forming the tensile stress film on the rear surface of the substrate, through a first area of a first showerhead in the chamber,
• providing a second gas, for forming the compressive stress film on the rear surface of the substrate, through a second area of the first showerhead,
• providing a purge gas to the rear surface of the substrate through a boundary area of the first showerhead, the boundary area being between the first area and the second area, and
• exhausting the first gas, the second gas, and the purge gas through the boundary area.