# US 2026/0090352 A1 · Semiconductor device and method of forming the same

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- Number: US 2026/0090352 A1
- Document ID: US20260090352A1
- Status: Published application
- Kind: A1
- Application number: 19/405,558
- Filed: 2025-12-02
- Published: 2026-03-26
- Earliest claimed: 2019-08-22
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Co., Ltd.
- Inventors: Hung-Chun Cho; Sih-Hao Liao; Yu-Hsiang Hu; Hung-Jui Kuo
- Web page: https://patentgrep.com/patent/US20260090352A1

## CPC

- H10P 72/74: {using temporarily an auxiliary support}
- H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
- H10W 20/042: {the barrier, adhesion or liner layers being seed or nucleation layers}
- H10W 70/60: Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40)
- H10W 72/30: Die-attach connectors
- H10W 72/90: Bond pads, in general
- H10W 74/016: {using moulds}
- H10W 74/111: {the semiconductor body being completely enclosed}
- H10W 74/127: {characterised by arrangements for sealing or adhesion}
- H10W 90/00: Package configurations
- H10P 72/7416: {used during dicing or grinding}
- H10P 72/7424: {used as a support during the manufacture of self-supporting substrates}
- H10P 72/743: {used as a support during manufacture of interconnect decals or build up layers}
- H10P 72/744: {Details of chemical or physical process used for separating the auxiliary support from a device or a wafer}
- H10W 70/65: Shapes or dispositions of interconnections
- H10W 70/655: Fan-out layouts
- H10W 72/20: Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W 72/823: {Interconnections through encapsulations, e.g. pillars through molded resin on a lateral side a chip}
- H10W 74/019: {using temporary auxiliary substrates (H10W74/017 takes precedence)}
- H10W 74/117: {the substrate having spherical bumps for external connection}
- H10W 74/137: {the encapsulations being directly on the semiconductor body (H10W74/134 takes precedence)}
- H10W 90/20: Configurations of stacked chips
- H10W 90/26: the stacked chips being of the same size without any chips being laterally offset, e.g. chip stacks having a rectangular shape
- H10W 90/291: {characterised by containers, encapsulations, or other housings for the stacked chips}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device includes a first die, a second die, a first redistribution layer (RDL) structure and a connector. The RDL structure is disposed between the first die and the second die and is electrically connected to the first die and the second die and includes a first polymer layer, a second polymer layer, a first conductive pattern and an adhesion promoter layer. The adhesion promoter layer is between and in direct contact with the second polymer layer and the first conductive pattern. The connector is disposed in the first polymer layer and in direct contact with the second die and the first conductive pattern.

## Claims

### Claim 1

A method of forming a semiconductor device, the method comprising:
forming a first conductive pattern on a first polymer layer;
forming a first adhesion promoter layer on the first conductive pattern, wherein the first adhesion promoter layer is in direct contact with the first conductive pattern;
forming a second polymer layer on the first polymer layer, wherein the second polymer layer is in direct contact with the first adhesion promoter layer;
placing a first die over a first side of the first polymer layer; and
placing a second die at a second side of the first polymer layer, the second side of the first polymer layer being opposite the first side of the first polymer layer, wherein the second die is electrically connected to the first die through the first conductive pattern.

### Claim 2 (depends on 1)

The method of claim 1, wherein the first adhesion promoter layer is formed on a sidewall and a top surface of the first conductive pattern.

### Claim 3 (depends on 2)

The method of claim 2, wherein the first adhesion promoter layer covers the sidewall of the first conductive pattern entirely.

### Claim 4 (depends on 1)

The method of claim 1, further comprising:
forming a through via (TV) over the second polymer layer; and
forming a second adhesion promoter layer on a sidewall of the TV.

### Claim 5 (depends on 4)

The method of claim 4, further comprising forming an encapsulant to encapsulate the first die and the TV, wherein the second adhesion promoter layer is in direct contact with the encapsulant.

### Claim 6 (depends on 1)

The method of claim 1, wherein the second polymer layer is formed between the first adhesion promoter layer and the first polymer layer.

### Claim 7 (depends on 1)

The method of claim 1, wherein forming the first adhesion promoter layer comprises conducting a chelation reaction between a chelating agent and the first conductive pattern.

### Claim 8 (depends on 1)

The method of claim 1, wherein the first adhesion promoter layer comprises a metal chelate compound, and wherein the first conductive pattern and the first adhesion promoter layer comprise a same metal element.

### Claim 9

A method comprising:
forming a metal structure on a substrate;
selectively forming an adhesion promoter layer on the metal structure by applying a chelating agent to the metal structure, wherein the chelating agent selectively reacts with the metal structure without reacting with the substrate; and
forming a dielectric layer over the substrate, wherein the dielectric layer contacts the adhesion promoter layer and exposed portions of the substrate.

### Claim 10 (depends on 9)

The method of claim 9, wherein the metal structure is a through via.

### Claim 11 (depends on 9)

The method of claim 9, wherein the adhesion promoter layer is formed over an upper surface of the metal structure, further comprising:
removing the adhesion promoter layer from the upper surface of the metal structure.

### Claim 12 (depends on 9)

The method of claim 9, wherein the metal structure is a redistribution line, wherein the redistribution line is part of a redistribution structure.

### Claim 13 (depends on 12)

The method of claim 12, wherein the adhesion promoter layer is formed over an upper surface of the metal structure, wherein the redistribution structure includes an insulating layer over the upper surface of the metal structure, wherein the adhesion promoter layer is between the insulating layer and the metal structure.

### Claim 14 (depends on 9)

The method of claim 9, wherein the adhesion promoter layer comprises a metal chelate compound.

### Claim 15 (depends on 9)

The method of claim 9, wherein the metal structure and the adhesion promoter layer comprise a same metal element.

### Claim 16

A method comprising:
forming a through via on a first surface of a substrate;
forming an adhesion promoter layer over the through via, wherein the first surface of the substrate is free of the adhesion promoter layer, wherein forming the adhesion promoter layer comprises applying a treatment agent including a chelating agent to the through via;
mounting a die on the first surface of the substrate; and
forming an encapsulant over the first surface of the substrate and along sidewalls of the through via and the die.

### Claim 17 (depends on 16)

The method of claim 16, further comprising forming an oxide layer along a sidewall of the through via, wherein the oxide layer is between the through via and the adhesion promoter layer.

### Claim 18 (depends on 16)

The method of claim 16, further comprising forming an oxide layer along a sidewall of the through via, wherein the oxide layer is within the adhesion promoter layer.

### Claim 19 (depends on 16)

The method of claim 16, further comprising forming an oxide layer along a sidewall of the through via, wherein the oxide layer is between the adhesion promoter layer and the encapsulant.

### Claim 20 (depends on 16)

The method of claim 16, wherein the through via and the adhesion promoter layer comprise a same metal element.