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US 2026/0090293 A1Published application
Semiconductor stacks and processes thereof
AssigneeLam Research Corporation
InventorsEaswar Srinivasan, Bhadri N. Varadarajan, Karl Frederick Leeser, Dennis M. Hausmann, Bart J. van Schravendijk, Aaron Durbin, Ramesh Chandrasekharan, Yukinori Sakiyama
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Abstract
The present disclosure relates to vertical stacks including heterolayers, as well as processes and methods of their manufacture. Also described herein are apparatuses and systems for preparing and making such stacks.
Claims15
A method for forming heterolayers on a substrate, the method comprising:
- (a) forming a first layer by flowing a first precursor into a reaction chamber and toward a substrate in the presence of an energetic species, wherein the energetic species reacts with the first precursor to deposit the first layer on the substrate, and wherein the substrate is disposed within the reaction chamber;
- (b) forming a second layer by flowing a second precursor and an optional third precursor into the reaction chamber and toward the substrate in the presence of an energetic species, wherein the energetic species reacts with the second precursor or the optional third precursor to deposit the second layer on the substrate;
- and
- (c) repeating (a) and (b) until a predetermined number of layers have been deposited on the substrate,
- optionally wherein the first layer has a differing etch behavior than the second layer.
2 more elements
An apparatus to form heterolayers on a substrate, the apparatus comprising:
- a reaction chamber;
- a substrate support positioned in the reaction chamber and configured to support a substrate;
- a plasma source;
- and
- one or more controllers configured with instructions for performing the following operations:
- (a) causing formation of a first layer by flowing a first precursor into the reaction chamber and toward the substrate in the presence of a plasma-generated energetic species, wherein the plasma-generated energetic species reacts with the first precursor to deposit the first layer on the substrate;
- (b) causing formation of a second layer by flowing a second precursor and an optional third precursor into the reaction chamber and toward the substrate in the presence of a plasma-generated energetic species, wherein the plasma-generated energetic species reacts with the second precursor and the optional third precursor to deposit the second layer on the substrate;
- and
- (c) causing repetition of (a) and (b) until a predetermined number of layers have been deposited on the substrate,
- optionally wherein the first layer has a differing etch behavior than the second layer.
7 more elements
A method for epitaxially depositing a film, the method comprising:
- precleaning a surface of a substrate to remove an oxide;
- pretreating the surface of the substrate to provide a hydrophobic surface or a passivated surface;
- epitaxially depositing at least one of a first layer or a second layer in the presence of plasma on a precleaned and pretreated surface and within an epitaxy chamber;
- removing the substrate from the epitaxy chamber;
- and
- performing a reactor clean, wherein the performing the reactor clean is performed at least one of before providing the substrate within the epitaxy chamber or after the removing the substrate from the epitaxy chamber.
3 more elements
15-20. (canceled)
Dependencies are inferred from the claim text.