# US 2026/0090184 A1 · Image sensor and manufacturing method thereof

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- Number: US 2026/0090184 A1
- Document ID: US20260090184A1
- Status: Published application
- Kind: A1
- Application number: 19/399,658
- Filed: 2025-11-25
- Published: 2026-03-26
- Earliest claimed: 2020-11-23
- Assignees: United Microelectronics Corp.
- Applicants: United Microelectronics Corp.
- Inventors: Zhaoyao Zhan; QIANWEI DING; XIAOHONG JIANG; CHING HWA TEY
- Web page: https://patentgrep.com/patent/US20260090184A1

## CPC

- H10K 39/32: Organic image sensors
- H10K 85/50: Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

The present invention provides an image sensor, the image sensor includes a substrate, a first circuit layer on the substrate, at least one nanowire photodiode located on the first circuit layer and electrically connected with the first circuit layer, wherein the nanowire photodiode comprises a lower material layer and an upper material layer, and a P-N junction or a Schottky junction is arranged between the lower material layer and the upper material layer, wherein the lower material layer comprises a perovskite material, and a precursor layer located under the lower material layer, wherein the precursor layer comprises different metal elements as the lower material layer, a top surface of the precursor layer and a top surface of the lower material layer are disposed on different levels.

## Claims

### Claim 1

An image sensor, comprising:
a substrate;
a first circuit layer on the substrate;
at least one nanowire photodiode located on the first circuit layer and electrically connected with the first circuit layer, wherein the nanowire photodiode comprises a lower material layer and an upper material layer, and a P-N junction or a Schottky junction is arranged between the lower material layer and the upper material layer, wherein the lower material layer comprises a perovskite material; and
a precursor layer located under the lower material layer, wherein the precursor layer comprises different metal elements as the lower material layer, wherein a top surface of the precursor layer and a top surface of the lower material layer are disposed on different levels.

### Claim 2 (depends on 1)

The image sensor according to claim 1, wherein the general formula of the perovskite material is ABX3, where A contains methylamine ions, formamidine ions and metal cesium ions (Cs+), B contains metal cations (Pb2+, Sn2+, Bi2+), and X contains halogen anions (Cl−, Br−, I−).

### Claim 3 (depends on 1)

The image sensor according to claim 1, wherein the perovskite material comprises MAPbI3, FASnCl3, FASnBr3, FASnI3, FASnClxBryI3-x-y, MASnCl3, MASnBr3, MASnI3, MASnClxBryI3-x-y, CsSnCl3, CsSnBr3, CsSnI3, CsSnClxBryI3-x-y, FAPbCl3, FAPbBr3, FAPbI3, FAPbClxBryI3-x-y, MAPbCl3, MAPbBr3, MAPbI3, MAPbClxBryI3-x-y, CsPbCl3, CsPbBr3, CsPbI3, CsPbClxBryI3-x-y, FABiCl3, FABiBr3, FABiI3, FABiClxBryI3-x-y, MABiCl3, MABiBr3, MABiI3, MABiClxBryI3-x-y, CsBiCl3, CsBiBr3, CsBiI3, and CsBiClxBryI3-x-y, where parameters x and y range from 0 to 3.

### Claim 4 (depends on 1)

The image sensor according to claim 1, wherein the perovskite material contains N-type conductivity type, and the upper material layer has P-type conductivity type.

### Claim 5 (depends on 1)

The image sensor according to claim 1, wherein the upper material layer comprises a metal oxide layer.

### Claim 6 (depends on 5)

The image sensor according to claim 5, wherein the upper material layer comprises MnO3 (molybdenum trioxide), V2O5, WO3, Si, Ge, GaAs, GaN, WSe2, NiO, Cu2O, CuO, TCNQ (Tetracyanoquinodimethane), and F4-TCNQ.

### Claim 7 (depends on 1)

The image sensor according to claim 1, further comprising at least one optical device located on the nanowire photodiode.

### Claim 8 (depends on 1)

The image sensor according to claim 1, further comprises a second device, the second device at least comprises a second substrate and a second circuit layer, and a contact structure passing through the substrate and electrically connecting the first circuit layer and the second circuit layer.

### Claim 9 (depends on 1)

The image sensor according to claim 1, wherein the top surface of the precursor layer and is higher than the top surface of the lower material layer.

### Claim 10 (depends on 1)

The image sensor according to claim 1, wherein the top surface of the precursor layer and is lower than the top surface of the lower material layer.

### Claim 11

A method for forming an image sensor, comprising:
providing a substrate;
forming a first circuit layer on the substrate;
forming at least one nanowire photodiode on the first circuit layer and electrically connected with the first circuit layer, wherein the nanowire photodiode comprises a lower material layer and an upper material layer, and a P-N junction is formed between the lower material layer and the upper material layer, wherein the lower material layer comprises perovskite material; and
forming a precursor layer under the lower material layer, wherein the precursor layer comprises different metal elements as the lower material layer, wherein a top surface of the precursor layer and a top surface of the lower material layer are disposed on different levels.

### Claim 12 (depends on 11)

The method according to claim 11, wherein the general formula of the perovskite material is ABX3, where A contains methylamine ions, formamidine ions and metal cesium ions (Cs+), B contains metal cations (Pb2+, Sn2+, Bi2+), and X contains halogen anions (Cl−, Br−, I−).

### Claim 13 (depends on 12)

The method according to claim 12 wherein the perovskite material comprises MAPbI3, FASnCl3, FASnBr3, FASnI3, FASnClxBryI3-x-y, MASnCl3, MASnBr3, MASnI3, MASnClxBryI3-x-y, CsSnCl3, CsSnBr3, CsSnI3, CsSnClxBryI3-x-y, FAPbCl3, FAPbBr3, FAPbI3, FAPbClxBryI3-x-y, MAPbCl3, MAPbBr3, MAPbI3, MAPbClxBryI3-x-y, CsPbCl3, CsPbBr3, CsPbI3, CsPbClxBryI3-x-y, FABiCl3, FABiBr3, FABiI3, FABiClxBryI3-x-y, MABiCl3, MABiBr3, MABiI3, MABiClxBryI3-x-y, CsBiCl3, CsBiBr3, CsBiI3, and CsBiClxBryI3-x-y, where parameters x and y range from 0 to 3.

### Claim 14 (depends on 11)

The method according to claim 11, wherein the perovskite material contains n-type conductivity type.

### Claim 15 (depends on 11)

The method according to claim 11, wherein the upper material layer comprises a metal oxide layer, and the upper material layer has a p-type conductivity type.

### Claim 16 (depends on 15)

The method according to claim 15, wherein the upper material layer comprises MnO3 (molybdenum trioxide), V2O5, WO3, Si, Ge, GaAs, GaN, WSe2, NiO, Cu2O, CuO, TCNQ (Tetracyanoquinodimethane), and F4-TCNQ.

### Claim 17 (depends on 11)

The method according to claim 11, further comprising forming at least one optical device on the nanowire photodiode.

### Claim 18 (depends on 11)

The method according to claim 11, further comprising forming a second device, the second device at least comprises a second substrate and a second circuit layer, and a contact structure passing through the substrate and electrically connecting the first circuit layer and the second circuit layer.

### Claim 19 (depends on 11)

The method according to claim 11, wherein the lower material layer is formed by chemical vapor deposition (CVD) or electrochemical method, and the processing temperature is lower than 400 degrees Celsius.

### Claim 20 (depends on 11)

The method according to claim 11, wherein the method for forming at least the nanowire photodiode comprises:
forming a dielectric layer on the first circuit layer, and a plurality of arrays of nanowire holes are etched on the dielectric layer.

### Claim 21 (depends on 20)

The method according to claim 20, wherein the method for forming at least the nanowire photodiode further comprises:
forming a lower material layer in the nanowire holes, and filling part of the nanowire holes with the lower material layer by a chemical mechanical polishing or an etching back method.

### Claim 22 (depends on 21)

The method according to claim 21, wherein the method for forming at least the nanowire photodiode further comprises:
forming an upper material layer on the lower material layer and fills the nanowire holes, wherein a P-N junction or a Schottky junction is formed between the lower material layer and the upper material layer.