# US 2026/0090145 A1 · Light emitting diode and light emitting device

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- Number: US 2026/0090145 A1
- Document ID: US20260090145A1
- Status: Published application
- Kind: A1
- Application number: 19/336,499
- Filed: 2025-09-23
- Published: 2026-03-26
- Earliest claimed: 2024-09-24
- Assignees: Quanzhou Sanan Semiconductor Technology Co., Ltd.
- Applicants: Quanzhou Sanan Semiconductor Technology Co., Ltd.
- Inventors: Zhongjie Yang; Guohua Zhang; Jingfeng Huang; Yongling LAN; Chung-Ying Chang
- Web page: https://patentgrep.com/patent/US20260090145A1

## CPC

- H10H 20/825: containing nitrogen, e.g. GaN
- H10H 20/811: having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures
- H10W 90/00: Package configurations
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Provided are a light emitting diode (LED) and a light emitting device. The LED includes a first semiconductor layer, an active layer and a second semiconductor layer, which are sequentially stacked in that order from bottom to top. The active layer includes AlmGa1-mN barrier layers and AlnGa1-nN well layer, which are alternately stacked periodically, and one AlmGa1-mN barrier layer and one AlnGa1-nN well layer is taken as one period to thereby form multiple periods. In at least one period of the multiple periods, a ratio of a thickness of the AlnGa1-nN well layer to a thickness of the AlmGa1-mN barrier layer is in a range of 1:3 to 1:8. By adjusting a thickness ratio of the AlnGa1-nN well layer to the AlmGa1-mN barrier layer, a combination efficiency of electrons and holes in a quantum well can be effectively improved, thus improving a luminous efficiency of the LED.

## Claims

### Claim 1

A light emitting diode (LED), comprising: a first semiconductor layer, an active layer, and a second semiconductor layer, which are stacked sequentially in that order from bottom to top;
wherein the active layer comprises AlmGa1-mN barrier layers and AlnGa1-nN well layers, which are alternately stacked periodically, where one layer of the AlmGa1-mN barrier layers and one layer of the AlnGa1-nN well layers is taken as one period to thereby form multiple periods, 0 <m<1, and 0<n<1; and
wherein in at least one period of the multiple periods, a ratio of a thickness of the AlnGa1-nN well layer to a thickness of the AlmGa1-mN barrier layer is in a range of 1:3 to 1:8.

### Claim 2 (depends on 1)

The LED as claimed in claim 1, wherein in the at least one period of the multiple periods, the ratio of the thickness of the AlnGa1-nN well layer to the thickness of the AlmGa1-mN barrier layer is in a range of 1:4 to 1:7.

### Claim 3 (depends on 1)

The LED as claimed in claim 1, wherein in each of the multiple periods, a ratio of a thickness of the AlnGa1-nN well layer to a thickness of the AlmGa1-mN barrier layer is in a range of 1:3 to 1:8.

### Claim 4 (depends on 3)

The LED as claimed in claim 3, wherein in each of the multiple periods, the ratio of the thickness of the AlnGa1-nN well layer to the thickness of the AlmGa1-mN barrier layer is in a range of 1:4 to 1:7.

### Claim 5 (depends on 1)

The LED as claimed in claim 1, wherein in one of the multiple periods, a sum of a thickness of the AlmGa1-mN barrier layer and a thickness of the AlnGa1-nN well layer is in a range of 7 nm to 10 nm.

### Claim 6 (depends on 1)

The LED as claimed in claim 1, wherein in one of the multiple periods, a thickness of the AlmGa1-mN barrier layer is in a range of 6 nm to 8 nm.

### Claim 7 (depends on 1)

The LED as claimed in claim 1, wherein in one of the multiple periods, a thickness of the AlnGa1-nN well layer is in a range of 1 nm to 2 nm.

### Claim 8 (depends on 1)

The LED as claimed in claim 1, wherein m≥0.5, and m>n.

### Claim 9 (depends on 1)

The LED as claimed in claim 1, wherein in a direction from the first semiconductor layer to the second semiconductor layer, a content m of a component Al in the AlmGa1-mN barrier layers is in a constant distribution.

### Claim 10 (depends on 1)

The LED as claimed in claim 1, wherein in a direction from the first semiconductor layer to the second semiconductor layer, a content m of a component Al in the AlmGa1-mN barrier layers increases gradually.

### Claim 11 (depends on 1)

The LED as claimed in claim 1, wherein in a direction from the first semiconductor layer to the second semiconductor layer, a content n of a component Al in the AlnGa1-nN barrier layers is in a constant distribution.

### Claim 12 (depends on 1)

The LED as claimed in claim 1, wherein in a direction from the first semiconductor layer to the second semiconductor layer, a content n of a component Al in the AlnGa1-nN barrier layers decreases gradually.

### Claim 13 (depends on 1)

The LED as claimed in claim 1, further comprising a substrate, wherein a transition layer is disposed between the substrate and the first semiconductor layer, the transition layer comprises AlxGa1-xN layers and AlyGa1-yN layers, which are alternately stacked periodically; and one layer of the AlxGa1-xN layers and one layer of the AlyGa1-yN layers is taken as one cycle, 0<x<1, 0<y<1, and x≠y.

### Claim 14 (depends on 13)

The LED as claimed in claim 13, wherein a buffer layer is disposed between the substrate and the transition layer, and an electron blocking layer is disposed between the active layer and the second semiconductor layer.

### Claim 15

An LED, comprising: a first semiconductor layer, an active layer, and a second semiconductor layer, which are stacked sequentially in that order from bottom to top;
wherein the active layer comprises AlmGa1-mN barrier layers and AlnGa1-nN well layers, which are alternately stacked periodically, where one layer of the AlmGa1-mN barrier layers and one layer of the AlnGa1-nN well layers is taken as one period to thereby form multiple periods, 0 <m<1, and 0<n<1; and
wherein in each of the multiple periods, a thickness of the AlmGa1-mN barrier layer is not more than 8 nm.

### Claim 16 (depends on 15)

The LED as claimed in claim 15, wherein in each of the multiple periods, the thickness of the AlmGa1-mN barrier layer is in a range of 6 nm to 8 nm.

### Claim 17 (depends on 15)

The LED as claimed in claim 15, wherein in one of the multiple periods, a thickness of the AlnGa1-nN well layer is in a range of 1 nm to 2 nm.

### Claim 18 (depends on 15)

The LED as claimed in claim 15, wherein in each of the multiple periods, a ratio of a thickness of the AlnGa1-nN well layer to the thickness of the AlmGa1-mN barrier layer is in a range of 1:3 to 1:8.

### Claim 19 (depends on 15)

The LED as claimed in claim 15, wherein m≥0.5, and m>n.

### Claim 20 (depends on 1)

A light emitting device, comprising: a circuit board and multiple light emitting units disposed on the circuit board, wherein each of the multiple light emitting units comprises the LED as claimed in claim 1.