# US 2026/0090131 A1 · Solar cell and photovoltaic module > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2026/0090131 A1 - Document ID: US20260090131A1 - Status: Published application - Kind: A1 - Application number: 19/408,089 - Filed: 2025-12-03 - Published: 2026-03-26 - Earliest claimed: 2024-02-08 - Assignees: Zhejiang Jinko Solar Co., Ltd. - Applicants: Zhejiang Jinko Solar Co., Ltd. - Inventors: Huimin LI; Menglei XU; Jie YANG; Xinyu ZHANG - Web page: https://patentgrep.com/patent/US20260090131A1 ## CPC - H10F 77/147: {Shapes of bodies} - H10F 77/703: {of the semiconductor bodies, e.g. textured active layers} - H10F 10/14: Photovoltaic cells having only PN homojunction potential barriers - H10F 10/166: the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells - H10F 19/80: Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells - H10F 77/16: Material structures, e.g. crystalline structures, film structures or crystal plane orientations - H10F 77/211: {for photovoltaic cells} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract Embodiments of the present disclosure provide a solar cell and a photovoltaic module. The solar cell includes: a substrate having a front surface and a rear surface, a first doped polycrystalline silicon layer doped with N-type dopant ions and disposed over the front surface or over the rear surface, and a second doped polycrystalline silicon layer doped with P-type dopant ions and disposed over the rear surface. A surface of the first doped polycrystalline silicon layer away from the substrate has a plurality of first protrusion structures. A surface of the second doped polycrystalline silicon layer away from the substrate has a plurality of second protrusion structures. An average thickness of the first protrusion structures is greater than an average thickness of the second protrusion structures, and a thickness of the first doped polycrystalline silicon layer is not greater than a thickness of the second doped polycrystalline silicon layer. ## Claims ### Claim 1 A solar cell, comprising: a substrate, having a front surface and a rear surface opposite to each other; a first doped polycrystalline silicon layer doped with an N-type dopant element and disposed over the rear surface; a second doped polycrystalline silicon layer doped with a P-type dopant element and disposed over the rear surface, wherein the first doped polycrystalline silicon layer includes a plurality of portions, the second doped polycrystalline silicon layer includes a plurality of portions, and the plurality of portions of the first doped polycrystalline silicon layer interleave with the plurality of portions of the second doped polycrystalline silicon layer; and first electrodes and second electrodes, wherein the first electrodes are in electrical contact with the first doped polycrystalline silicon layer, and the second electrodes are in electrical contact with the second doped polycrystalline silicon layer; wherein a surface of the first doped polycrystalline silicon layer away from the substrate has a plurality of first protrusion structures; wherein a surface of the second doped polycrystalline silicon layer away from the substrate has a plurality of second protrusion structures; and wherein an average thickness of the plurality of first protrusion structures is greater than an average thickness of the plurality of second protrusion structures. ### Claim 2 (depends on 1) The solar cell according to claim 1, wherein a thickness of the first doped polycrystalline silicon layer is less than or equal to a thickness of the second doped polycrystalline silicon layer. ### Claim 3 (depends on 1) The solar cell according to claim 1, further including a first dielectric layer disposed between the substrate and the first doped polycrystalline silicon layer, wherein the first dielectric layer has a thickness ranged from 0.5 nm to 5 nm. ### Claim 4 (depends on 3) The solar cell according to claim 3, further including a second dielectric layer disposed between the substrate and the second doped polycrystalline silicon layer. ### Claim 5 (depends on 1) The solar cell according to claim 1, wherein the average thickness of the plurality of first protrusion structures is less than or equal to 30 nm. ### Claim 6 (depends on 1) The solar cell according to claim 1, wherein the average thickness of the plurality of second protrusion structures is less than or equal to 20 nm. ### Claim 7 (depends on 1) The solar cell according to claim 1, further including a first passivation layer formed over the front surface and a second passivation layer formed over the first doped polycrystalline silicon layer and the second doped polycrystalline silicon layer. ### Claim 8 (depends on 1) The solar cell according to claim 1, wherein a spacing between two first electrodes 114 immediately adjacent to each other or a spacing between two second electrodes 124 immediately adjacent to each other along a first direction X ranges from 0.5 mm to 2 mm. ### Claim 9 (depends on 1) The solar cell according to claim 1, wherein the thickness of the second doped polycrystalline silicon layer ranges from 100 nm to 400 nm. ### Claim 10 (depends on 1) The solar cell according to claim 1, wherein the thickness of the first doped polycrystalline silicon layer ranges from 50 nm to 300 nm. ### Claim 11 (depends on 1) The solar cell according to claim 1, wherein the rear surface has a plurality of N regions and a plurality of P regions, each portion of the plurality of portions of the first doped polycrystalline silicon layer is disposed over a respective N region of the plurality of N regions, and each portion of the plurality of portions of the second doped polycrystalline silicon layer is disposed over a respective P region of the plurality of P regions. ### Claim 12 (depends on 1) The solar cell according to claim 1, wherein a respective first protrusion structure of the plurality of first protrusion structures is formed by first silicon grains of a plurality of first silicon grains that form the first doped polycrystalline silicon layer, a respective second protrusion structure of the plurality of second protrusion structures is formed by second silicon grains of a plurality of second silicon grains that form the second doped polycrystalline silicon layer, a respective first silicon grain of the plurality of first silicon grains has a grain size ranged from 10 nm to 300 nm, and a respective second silicon grain of the plurality of second silicon grains has a grain size ranged from 100 nm to 900 nm. ### Claim 13 A photovoltaic module, comprising: at least one cell string, formed by connecting a plurality of solar cells; at least one encapsulation adhesive layer, configured to cover a surface of the at least one cell string; and at least one cover plate, configured to cover a surface of the at least one encapsulation adhesive layer away from the at least one cell string; wherein each solar cell of the plurality of solar cells includes: a substrate, having a front surface and a rear surface opposite to each other; a first doped polycrystalline silicon layer, doped with an N-type dopant element and disposed over the rear surface; a second doped polycrystalline silicon layer, doped with a P-type dopant element and disposed over the rear surface, wherein the first doped polycrystalline silicon layer includes a plurality of portions, the second doped polycrystalline silicon layer includes a plurality of portions, and the plurality of portions of the first doped polycrystalline silicon layer interleave with the plurality of portions of the second doped polycrystalline silicon layer; and first electrodes and second electrodes, wherein the first electrodes are in electrical contact with the first doped polycrystalline silicon layer, and the second electrodes are in electrical contact with the second doped polycrystalline silicon layer; wherein a surface of the first doped polycrystalline silicon layer away from the substrate has a plurality of first protrusion structures; wherein a surface of the second doped polycrystalline silicon layer away from the substrate has a plurality of second protrusion structures; and wherein an average thickness of the plurality of first protrusion structures is greater than an average thickness of the plurality of second protrusion structures. ### Claim 14 (depends on 13) The photovoltaic module according to claim 13, wherein a thickness of the first doped polycrystalline silicon layer is less than or equal to a thickness of the second doped polycrystalline silicon layer. ### Claim 15 (depends on 13) The photovoltaic module according to claim 13, further including a first dielectric layer disposed between the substrate and the first doped polycrystalline silicon layer, wherein the first dielectric layer has a thickness ranged from 0.5 nm to 5 nm. ### Claim 16 (depends on 15) The photovoltaic module according to claim 15, further including a second dielectric layer disposed between the substrate and the second doped polycrystalline silicon layer. ### Claim 17 (depends on 13) The photovoltaic module according to claim 13, wherein the average thickness of the plurality of first protrusion structures is less than or equal to 30 nm. ### Claim 18 (depends on 13) The photovoltaic module according to claim 13, wherein the average thickness of the plurality of second protrusion structures is less than or equal to 20 nm. ### Claim 19 (depends on 13) The photovoltaic module according to claim 13, wherein a respective first protrusion structure of the plurality of first protrusion structures is formed by first silicon grains of a plurality of first silicon grains that form the first doped polycrystalline silicon layer, a respective second protrusion structure of the plurality of second protrusion structures is formed by second silicon grains of a plurality of second silicon grains that form the second doped polycrystalline silicon layer, a respective first silicon grain of the plurality of first silicon grains has a grain size ranged from 10 nm to 300 nm, and a respective second silicon grain of the plurality of second silicon grains has a grain size ranged from 100 nm to 900 nm. ### Claim 20 (depends on 13) The photovoltaic module according to claim 13, wherein the rear surface has a plurality of N regions and a plurality of P regions, each portion of the plurality of portions of the first doped polycrystalline silicon layer is disposed over a respective N region of the plurality of N regions, and each portion of the plurality of portions of the second doped polycrystalline silicon layer is disposed over a respective P region of the plurality of P regions.