# US 2026/0090122 A1 · Imaging device and electronic device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2026/0090122 A1 - Document ID: US20260090122A1 - Status: Published application - Kind: A1 - Application number: 19/109,746 - Filed: 2023-07-24 - Published: 2026-03-26 - Earliest claimed: 2022-09-15 - Assignees: Sony Semiconductor Solutions Corporation - Applicants: Sony Semiconductor Solutions Corporation - Inventors: Seiki TAKAHASHI; Shinichiro NOUDO; Maho WATANABE; Shigehiro IKEHARA - Web page: https://patentgrep.com/patent/US20260090122A1 ## CPC - H10F 39/807: {Pixel isolation structures} - H10F 39/182: {Colour image sensors} - H10F 39/802: {Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes} - H10F 39/8053: {Colour filters} - H10F 39/8057: {Optical shielding} - H10F 39/8063: {Microlenses} - H10F 39/803: {Pixels having integrated switching, control, storage or amplification elements} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract An isolation ratio between a plurality of sub-pixels included in a pixel is further improved. An imaging device including a semiconductor substrate including a photoelectric conversion unit provided for each of pixels arranged two-dimensionally and a pixel isolation unit that isolates the photoelectric conversion units from each other, a color filter and an on-chip lens provided for each of the pixels on one surface of the semiconductor substrate, an inter-filter isolation unit provided to include a low refractive index material having a refractive index lower than a refractive index of the color filter between the color filters and isolate the color filter for each of the pixels, and a sub-pixel isolation unit that isolates the photoelectric conversion units of the pixels including a plurality of sub-pixels for each of the sub-pixels. ## Claims ### Claim 1 An imaging device, comprising: a semiconductor substrate including a photoelectric conversion unit provided for each of pixels arranged two-dimensionally and a pixel isolation unit that isolates the photoelectric conversion units from each other; a color filter and an on-chip lens provided for each of the pixels on one surface of the semiconductor substrate; an inter-filter isolation unit provided to include a low refractive index material having a refractive index lower than a refractive index of the color filter between the color filters and isolate the color filter for each of the pixels; and a sub-pixel isolation unit that isolates the photoelectric conversion units of the pixels including a plurality of sub-pixels for each of the sub-pixels. ### Claim 2 (depends on 1) The imaging device according to claim 1, wherein the pixels each include two of the sub-pixels, and the sub-pixel isolation unit separates the photoelectric conversion unit for each of the sub-pixels by extending in one direction. ### Claim 3 (depends on 2) The imaging device according to claim 2, wherein the sub-pixel isolation unit is divided into two portions separated from each other by being divided at a central portion of the pixel. ### Claim 4 (depends on 2) The imaging device according to claim 2, wherein the sub-pixel isolation unit is provided in an island shape in the pixel. ### Claim 5 (depends on 2) The imaging device according to claim 2, wherein a light shielding unit is provided on a side of the one surface of the pixel isolation unit. ### Claim 6 (depends on 2) The imaging device according to claim 2, wherein the sub-pixel isolation unit is provided continuously between the pixels adjacent to each other across the pixel isolation unit between the pixels adjacent in the one direction. ### Claim 7 (depends on 2) The imaging device according to claim 2, wherein the sub-pixel isolation unit is provided to penetrate the semiconductor substrate. ### Claim 8 (depends on 7) The imaging device according to claim 7, wherein the sub-pixel isolation unit is divided into two portions separated from each other by being divided in a thickness direction of the semiconductor substrate. ### Claim 9 (depends on 2) The imaging device according to claim 2, wherein the low refractive index material is air, and the inter-filter isolation unit includes a gap including the air and an insulating material covering at least a part of an inner wall of the gap. ### Claim 10 (depends on 1) The imaging device according to claim 1, wherein a low refractive index region having a refractive index lower than a refractive index of the color filter is provided inside the color filter on a side of the semiconductor substrate. ### Claim 11 (depends on 10) The imaging device according to claim 10, wherein the low refractive index region is provided to extend from a bottom surface of the color filter on the side of the semiconductor substrate to a central portion of the color filter. ### Claim 12 (depends on 10) The imaging device according to claim 10, wherein the low refractive index region is provided in a region corresponding to the sub-pixel isolation unit. ### Claim 13 (depends on 12) The imaging device according to claim 12, wherein the low refractive index region is provided in an island shape in the pixel. ### Claim 14 (depends on 12) The imaging device according to claim 12, wherein the low refractive index region is divided into a plurality of portions separated from each other by being divided at a central portion of the pixel. ### Claim 15 (depends on 10) The imaging device according to claim 10, wherein the low refractive index material is air, and a gap including the air in the inter-filter isolation unit has an outer shape defined by surrounding a side surface and an upper surface with an insulating material. ### Claim 16 (depends on 15) The imaging device according to claim 15, wherein the gap of the inter-filter isolation unit is provided to extend to an inside of the semiconductor substrate, and the pixel isolation unit is provided below the gap. ### Claim 17 (depends on 10) The imaging device according to claim 10, wherein a gap is provided inside the sub-pixel isolation unit. ### Claim 18 (depends on 10) The imaging device according to claim 10, wherein the pixels each include two of the sub-pixels, and the sub-pixel isolation unit separates the photoelectric conversion unit for each of the sub-pixels by extending in one direction. ### Claim 19 (depends on 10) The imaging device according to claim 10, wherein the pixels each include four of the sub-pixels, and the sub-pixel isolation unit separates the photoelectric conversion unit for each of the sub-pixels by extending in each of one direction and a direction orthogonal to the one direction. ### Claim 20 An electronic device comprising an imaging device, wherein the imaging device includes: a semiconductor substrate including a photoelectric conversion unit provided for each of pixels arranged two-dimensionally and a pixel isolation unit that isolates the photoelectric conversion units from each other; a color filter and an on-chip lens provided for each of the pixels on one surface of the semiconductor substrate; an inter-filter isolation unit provided to include a low refractive index material having a refractive index lower than a refractive index of the color filter between the color filters and isolate the color filter for each of the pixels; and a sub-pixel isolation unit that isolates the photoelectric conversion units of the pixels including a plurality of sub-pixels for each of the sub-pixels.