Thin Film Transistor, Manufacturing Method of Thin Film Transistor and Display Apparatus Comprising the Same

A thin film transistor comprising:

• an active layer;
• a gate electrode overlapping at least partly with the active layer;
• and
• a source electrode and a drain electrode connected to the active layer and spaced apart from each other,
• wherein the active layer comprises:
• a first region;
• a second region on one side of the first region;
• and
• a third region disposed on another side of the first region,
• wherein when a direction connecting the source electrode and the drain electrode is a first direction and a direction perpendicular to the first direction is a second direction, the first region, the second region, and the third region are disposed along the second direction,
• wherein the first region comprises:
• a channel portion overlapping the gate electrode;
• a first connecting portion on one side of the channel portion;
• and
• a second connecting portion on another side of the channel portion,
• wherein the second region includes a first dopant reduction portion and a second dopant reduction portion,
• wherein the third region includes a third dopant reduction portion and a fourth dopant reduction portion, and
• wherein the gate electrode is disposed inside the active layer in a plane view, and
• wherein the first dopant reduction portion, the second dopant reduction portion, the third dopant reduction portion, and the fourth dopant reduction portion each have a resistivity that is higher than a resistivity of the first connecting portion and the second connecting portion.