Memory devices with different conductive types and methods for manufacturing the same

A memory device, comprising:

• a first portion of a memory array comprising a plurality of first memory cells, each of the plurality of first cells comprising a first transistor with a first conductive type and electrically coupled to a first word line and a first bit line;
• and
• a second portion of the memory array comprising a plurality of second memory cells, each of the plurality of second memory cells comprising a second transistor with a second conductive type and electrically coupled to a second word line and a second bit line;
• wherein the first word line and second word line extend along a first lateral direction, and the first bit line and second bit line extend along a second lateral direction perpendicular to the first lateral direction;
• and
• wherein the first portion of the memory array and the second portion of the memory array are disposed next to each other along the first lateral direction.

A method for forming a memory device, comprising:

• forming a first portion of a memory array in a first area on a substrate, wherein the first portion of the memory array comprises a plurality of first read only memory (ROM) cells, each of the plurality of first ROM cells comprising a first transistor with a first conductive type;
• forming a second portion of the memory array in a second area on the substrate, wherein the second portion of the memory array comprises a plurality of second ROM cells, each of the plurality of second ROM cells comprising a second transistor with a second conductive type;
• and
• forming a word line driver in a third area of the substrate operatively coupled to both of the first and second portions of the memory array;
• wherein the first area, the second area, and the third area are arranged along a first lateral direction.