# US 2026/0088064 A1 · Semiconductor device and electronic device

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- Number: US 2026/0088064 A1
- Document ID: US20260088064A1
- Status: Published application
- Kind: A1
- Application number: 19/405,070
- Filed: 2025-12-01
- Published: 2026-03-26
- Earliest claimed: 2019-02-15
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Semiconductor Energy Laboratory Co., Ltd.
- Inventors: Hajime KIMURA; Yoshiyuki KUROKAWA
- Web page: https://patentgrep.com/patent/US20260088064A1

## CPC

- G11C 5/147: {Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops (G11C5/141 takes precedence)}
- G11C 7/1006: {Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor}
- G06N 3/048: Activation functions
- G06N 3/0499: Feedforward networks
- G06N 3/065: Analogue means
- G11C 11/419: Read-write [R-W] circuits
- G11C 11/54: using elements simulating biological cells, e.g. neuron
- G06N 3/08: Learning methods
- G11C 11/405: with three charge-transfer gates, e.g. MOS transistors, per cell
- G11C 11/412: using field-effect transistors only
- G11C: STATIC STORES (semiconductor memory devices H10B)
- G06N: COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS

## Abstract

A semiconductor device capable of product-sum operation with low power consumption is provided. The semiconductor device includes first and second circuits; the first circuit includes a first holding portion and a first transistor, and the second circuit includes a second holding portion and a second transistor. The first and second circuits are each electrically connected to first and second input wirings and first and second wirings. The first holding portion has a function of holding a first current flowing through the first transistor, and the second holding portion has a function of holding a second current flowing through the second transistor. The first and second currents are determined in accordance with first data. When a potential corresponding to second data is input to the first and second input wirings, the first circuit outputs a current to one of the first wiring and the second wiring and the second circuit outputs a current to the other of the first wiring and the second wiring. The amount of current output from the first or second circuit to the first wiring or the second wiring is determined in accordance with the first data and the second data.

## Claims

### Claim 1

A semiconductor device comprising:
a first wiring and a second wiring;
a switching circuit comprising a first switch, a second switch, a third switch, and a fourth switch;
a first circuit comprising a first current source circuit and a second current source circuit; and
a second circuit which is not directly connected to the first circuit,
wherein the first switch is positioned between the first wiring and the first circuit,
wherein the second switch is positioned between the second wiring and the first circuit,
wherein the third switch is positioned between the first wiring and the second circuit,
wherein the fourth switch is positioned between the second wiring and the second circuit,
wherein the first circuit is configured to supply a current corresponding to a weight coefficient using the first current source circuit and the second current source circuit, and
wherein the second circuit is configured to perform arithmetic operation.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1,
wherein the second circuit is configured to perform the arithmetic operation of an activation function of a neural network.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1, further comprising a third wiring,
wherein the switching circuit further comprises a fifth switch and a sixth switch,
wherein the fifth switch is positioned between the first wiring and the third wiring, and
wherein the sixth switch is positioned between the second wiring and the third wiring.

### Claim 4 (depends on 1)

The semiconductor device according to claim 1,
wherein each of the first switch, the second switch, the third switch, and the fourth switch comprises a transistor comprising an oxide semiconductor in a channel formation region.