Temperature drift compensation for generating a reference voltage

A device comprising:

• a heating element configured to generate heat for a die and to maintain a temperature for the die;
• a Buried Zener diode positioned at a first distance from the heating element, wherein current flows in the Buried Zener diode in response to the Buried Zener diode reaching a Zener voltage;
• a sensing element positioned at a second distance to the Buried Zener diode, wherein the second distance is smaller than the first distance, and wherein a distance between a position of the Buried Zener diode and a position of the sensing element is less than a given threshold, wherein the sensing element is configured to sense a temperature of the die at the second distance from the Buried Zener diode and to control a heat generated by the heating element in response thereto;
• at least one or more transistors associated with the Buried Zener diode configured to output a first voltage reference, wherein the first voltage reference is a reference voltage with an offset voltage, wherein the at least one or more transistors are positioned at a third distance from the heating element thereby positioning the Buried Zener diode between the heating element and the one or more transistors, wherein the third distance is greater than the first distance, and wherein the offset results from a change in ambient temperature between a location of the at least one or more transistors and a location of the sensing element;
• and
• a voltage compensating unit positioned between the sensing element and the heating element, wherein the voltage compensating unit is configured to reduce the offset voltage.