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US 2026/0085428 A1Published application
Dark finish charging contact and connector through pvd coating with alloying/doping
AssigneeMeta Platforms Technologies, LLC
InventorsJianer Bao, Yang Li, Isaac Finger, Karson Shadley, Samaneh Sharifi Golru, Erika Kelter, Jinsong Tian
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Abstract
A method of the subject technology includes creating a dark finish coating on charging contacts of a device by reducing Schottky junctions at an interface of a metal substrate and the dark finish coating, as well as between the charging contacts of device and charger. The Schottky junctions are formed at a semiconductor-metal interface and reducing the Schottky junction is accomplished through co-deposition during a physical vapor deposition (PVD) process.
Claims20
A method comprising:
- creating a dark finish coating on charging contacts of a device by:
- reducing a first Schottky junction at an interface of a metal substrate of the charging contacts and the dark finish coating;
- and
- reducing a second Schottky junction between the charging contacts of the device and a charger,
- wherein:
- the first Schottky junction and the second Schottky junction include a semiconductor-metal interface, and
- reducing the first Schottky junction and the second Schottky junction include using co-deposition during a physical vapor deposition (PVD) process.
4 more elements
A device, comprising:
- a charging area including a dark finish charging contact comprising:
- a Schottky junction formed at a semiconductor-metal interface including a metal substrate and a dark finish coating of the dark finish charging contact, wherein:
- the Schottky junction is reduced by using co-deposition during a PVD process, and
- the dark finish coating on the dark finish charging contact includes DLC/TaC for a reduced junction barrier height.
1 more element
A method comprising:
- creating a dark finish coating on charging contacts of a device by:
- reducing a first Schottky junction at a semiconductor-metal interface between a metal substrate and a dark finish coating of the dark finish coating on the charging contacts;
- and
- reducing a second Schottky junction at a location of a charging area,
- wherein:
- the first and second Schottky junctions are reduced using a PVD process including a co-deposition, and
- the co-deposition includes one of alloying or doping, and alloying comprises using Ti.
4 more elements
Dependencies are inferred from the claim text.