Substrate processing method and substrate processing apparatus

Abstract

Provided are a substrate processing method and a substrate processing apparatus for forming a thin boron nitride film on a substrate. A substrate processing method includes: preparing a substrate including a foundation layer; forming a boron-containing material layer on the substrate by exposing the substrate to a first boron-containing gas; forming a nucleus of a boron nitride-containing material by exposing the substrate on which the boron-containing material layer is formed to a plasma of a first processing gas containing a first nitrogen-containing gas and nitriding the boron-containing material layer; and forming a boron nitride film on the substrate by exposing the substrate on which the nucleus of the boron nitride-containing material is formed to a plasma of a second processing gas containing a second boron-containing gas and a second nitrogen-containing gas different from the first nitrogen-containing gas.

Dependencies are inferred from the claim text.