# US 2026/0085404 A1 · Precursor composition for thin film deposition, method for manufacturing thin film and thin film manufactured using the same, and electronic device comprising thin film > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2026/0085404 A1 - Document ID: US20260085404A1 - Status: Published application - Kind: A1 - Application number: 19/078,282 - Filed: 2025-03-13 - Published: 2026-03-26 - Earliest claimed: 2024-09-23 - Assignees: Samsung Display Co., Ltd.; JI-tech Co.,ltd - Applicants: Samsung Display Co., Ltd.; JI-tech Co.,ltd - Inventors: YUNG BIN CHUNG; WOO-SEOK JEON; SUKHUN HAM; JONG MU NA; JOO YOUNG LEE; SECHANG LIM; JUN HYUNG LIM - Web page: https://patentgrep.com/patent/US20260085404A1 ## CPC - C23C 16/18: from metallo-organic compounds - C23C 16/40: Oxides - C23C 16/407: {of zinc, germanium, cadmium, indium, tin, thallium or bismuth} - C23C 16/4408: {by purging residual gases from the reaction chamber or gas lines} - C23C 16/45531: {specially adapted for making ternary or higher compositions} - C23C 16/45553: {characterized by the use of precursors specially adapted for ALD} - C23C 16/56: After-treatment - H10D 62/875: {being semiconductor metal oxide, e.g. InGaZnO (Group II-VI materials H10D62/86; Group I-VI materials H10D62/871; Pb compounds or alloys H10D62/874)} - H10P 14/3434: {being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424)} - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract The present disclosure provides a precursor composition for deposition of a thin film including liquid indium precursor, liquid gallium precursor and liquid zinc precursor, a manufacturing method of the thin film by using the precursor composition, the thin film manufactured by using the precursor composition and an electronic device including the thin film. ## Claims ### Claim 1 A precursor composition for deposition of a thin film, comprising: liquid indium precursor; liquid gallium precursor; and liquid zinc precursor. ### Claim 2 (depends on 1) The precursor composition for deposition of the thin film of claim 1, wherein a molar ratio of indium:gallium:zinc in the precursor composition for deposition of the thin film is 0.1 to 10:0.1 to 10:0.1 to 10. ### Claim 3 (depends on 1) The precursor composition for deposition of the thin film of claim 1, wherein the liquid indium precursor is at least one species selected from triethylindium, triisopropylindium, and tri (tert-butyl) indium. ### Claim 4 (depends on 1) The precursor composition for deposition of the thin film of claim 1, wherein the precursor composition for deposition of the thin film does not include a solvent. ### Claim 5 (depends on 1) The precursor composition for deposition of the thin film of claim 1, wherein all of the liquid indium precursor, the liquid gallium precursor, and the liquid zinc precursor are alkyl-based precursor. ### Claim 6 A manufacturing method of a thin film, comprising: preparing a precursor composition for deposition of the thin film by mixing liquid indium precursor, liquid gallium precursor, and liquid zinc precursor; and forming the thin film on a substrate by using the precursor composition. ### Claim 7 (depends on 6) The manufacturing method of the thin film of claim 6, wherein indium, gallium and zinc in the precursor composition for deposition of the thin film are mixed with a molar ratio of 0.1 to 10:0.1 to 10:0.1 to 10. ### Claim 8 (depends on 6) The manufacturing method of the thin film of claim 6, wherein the liquid indium precursor is at least one species selected from triethylindium, tripropylindium, and tri (tert-butyl) indium. ### Claim 9 (depends on 6) The manufacturing method of the thin film of claim 6, wherein the precursor composition for deposition of the thin film does not involve a solvent. ### Claim 10 (depends on 6) The manufacturing method of the thin film of claim 6, wherein the forming of the thin film is performed through atomic layer deposition (ALD) or chemical vapor deposition (CVD) by using the precursor composition for deposition of the thin film. ### Claim 11 (depends on 6) The manufacturing method of the thin film of claim 6, wherein a temperature forming the thin film is between 100° C. and 300° C. ### Claim 12 (depends on 6) The manufacturing method of the thin film of claim 6, further comprising: vaporizing the precursor composition using a vaporizer before forming the thin film. ### Claim 13 (depends on 6) The manufacturing method of the thin film of claim 6, further comprising: first purging a chamber using inert gas after forming the thin film. ### Claim 14 (depends on 13) The manufacturing method of the thin film of claim 13, further comprising: oxidizing the thin film by using reactive gas after the first purging. ### Claim 15 (depends on 14) The manufacturing method of the thin film of claim 14, wherein a flow rate of the reactive gas is between 50 sccm and 500 sccm, and wherein a supply time of the reactive gas is between 0.1 seconds and 60 seconds. ### Claim 16 (depends on 14) The manufacturing method of the thin film of claim 14, further comprising: second purging the chamber using inert gas after the oxidizing the thin film. ### Claim 17 An electronic device comprising: a thin film formed by using a precursor composition comprising liquid indium precursor, liquid gallium precursor, and liquid zinc precursor, wherein the thin film is a single amorphous layer including indium, gallium and zinc. ### Claim 18 (depends on 17) The electronic device of claim 17, wherein the electronic device is one of a plane panel display, a curved display, a television, a billboard, a computer monitor, a medical monitor, a head mounted display (HMD), an indoor or outdoor lighting or light for signal, a wearable device, a foldable device, a rollable device, a bendable device, a flexible device, a curved device, an electronic notebook, an electronic book, a portable multimedia player (PMP), a personal digital assistant (PDA), a laser printer, a telephone, a cellphone, a tablet, a portable terminal, a notebook, a laptop, a digital camera, a viewfinder, a camcorder, a 3D display, a virtual reality or augmented reality display, a video wall containing multiple displays tiled together, a vehicle, an outdoor display device, a theater or stadium screen, and a signboard. ### Claim 19 (depends on 17) The electronic device of claim 17, wherein a ratio of indium in the thin film is more than or equal to 10 wt %. ### Claim 20 (depends on 17) The electronic device of claim 17, wherein the thin film has a refractive index of between 1.5 and 2.5 at 630 nm.