# US 2026/0085079 A1 · Composition for low-dielectric film, low-dielectric film and manufacturing method thereof

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2026/0085079 A1
- Document ID: US20260085079A1
- Status: Published application
- Kind: A1
- Application number: 19/078,335
- Filed: 2025-03-13
- Published: 2026-03-26
- Earliest claimed: 2024-09-25
- Assignees: Samsung Electronics Co., Ltd.; Dnf Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.; DNF Co., Ltd.
- Inventors: Donghun Jung; Gun Joo Park; In Kyung Jung; Sunhye Hwang; Min Sung Kim; Sung Gi Kim; Jeong Joo Park; Se Jin Jang; Cheol Won Jung; Byungkeun Hwang
- Web page: https://patentgrep.com/patent/US20260085079A1

## CPC

- C07F 7/1804: {Compounds having Si-O-C linkages (Si-O-acyl linkages C07F7/1896)}
- C23C 16/24: Deposition of silicon only
- C23C 16/401: {containing silicon}
- C23C 16/4481: {by evaporation using carrier gas in contact with the source material (C23C16/4486 takes precedence)}
- C23C 16/452: by activating reactive gas streams before {their} introduction into the reaction chamber, e.g. by {ionisation} or addition of reactive species
- C23C 16/505: using radio frequency discharges
- C07F: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM (metal-containing porphyrins C07D487/22)
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

A composition for forming a low-dielectric film, comprising a silicon precursor comprising a *—Si—C—Si—* bond and having a ratio of *—Si—C—Si—* bond unit to *—Si—O—* bond unit ratio of 0.1 to 0.8, the low-dielectric film, and the low-dielectric film manufacturing method are provided. A low-dielectric film manufactured using the composition of the present disclosure can implement a low-dielectric film with very high resistance to plasma damage, which could not be implemented using conventional compositions for forming low-dielectric films.

## Claims

### Claim 1

A composition for forming a low-dielectric film comprising:
a silicon precursor comprising a *—Si—C—Si—* bond,
wherein the low-dielectric film has a ratio of a *—Si—C—Si—* bond unit/*—Si—O—* bond unit ratio of 0.1 to 0.8.

### Claim 2 (depends on 1)

The composition for forming a low-dielectric film of claim 1, wherein
the silicon precursor is represented by formula 1
wherein:
each of R1, R3, R4 and R6 is independently hydrogen atom, substituted or unsubstituted C1 to C20 alkyl group, substituted or unsubstituted C1 to C20 alkoxy group, substituted or unsubstituted C3 to C20 cycloalkyl group, substituted or unsubstituted C2 to C20 alkenyl group, substituted or unsubstituted C2 to C20 alkynyl group, substituted or unsubstituted C3 to C20 cycloalkenyl group, substituted or unsubstituted C5 to C20 cycloalkynyl group, substituted or unsubstituted C6 to C20 aryl group or substituted or unsubstituted C6 to C20 aryloxy group,
each of R2 and R5 is independently substituted or unsubstituted C1 to C20 alkyl group, substituted or unsubstituted C3 to C20 cycloalkyl group, substituted or unsubstituted C2 to C20 alkenyl group, substituted or unsubstituted C2 to C20 alkynyl group, substituted or unsubstituted C3 to C20 cycloalkenyl group or substituted or unsubstituted C6 to C20 aryl group, and
n is an integer from 1 to 4.

### Claim 3 (depends on 1)

The composition for forming a low-dielectric film of claim 1, wherein
the silicon precursor is represented by formula 2:
wherein:
each of R7 to R12 is independently hydrogen atom, substituted or unsubstituted C1 to C20 alkyl group, substituted or unsubstituted C1 to C20 alkoxy group, substituted or unsubstituted C3 to C20 cycloalkyl group, substituted or unsubstituted C2 to C20 alkenyl group, substituted or unsubstituted C2 to C20 alkynyl group, substituted or unsubstituted C3 to C20 cycloalkenyl group, substituted or unsubstituted C6 to C20 aryl group or substituted or unsubstituted C6 to C20 aryloxy group, and
m is an integer from 1 to 5.

### Claim 4 (depends on 2)

The composition for forming a low-dielectric film of claim 2, wherein
at least one of R1 to R3 is a substituted or unsubstituted C1 to C20 alkoxy group.

### Claim 5 (depends on 4)

The composition for forming a low-dielectric film of claim 4, wherein
R1 is a substituted or unsubstituted C1 to C20 alkoxy group,
R2 to R6 are, respectively and independently substituted or unsubstituted C1 to C20 alkyl group, and
n is 1.

### Claim 6 (depends on 3)

The composition for forming a low-dielectric film of claim 3, wherein
R10 to R12 are respectively and independently substituted or unsubstituted C1 to C20 alkoxy group.

### Claim 7 (depends on 6)

The composition for forming a low-dielectric film of claim 6, wherein
R7 to R9 are respectively and independently hydrogen atom or substituted or unsubstituted C1 to C20 alkyl group, and
m is 1.

### Claim 8

A low-dielectric film comprising silicon precursor comprising
*—Si—C—Si—* bonding,
wherein a ratio of *—Si—C—Si—* bond unit to *—Si—O—* bond unit in the low-dielectric film is 0.1 to 0.8.

### Claim 9 (depends on 8)

The low-dielectric film of claim 8, wherein
a carbon content in the low-dielectric film is 10 at % to 50 at %.

### Claim 10 (depends on 8)

The low-dielectric film of claim 8, wherein
a ratio of *—Si—C—Si—* bond unit to *—Si—O—* bond unit of the low-dielectric film is 0.1 to 0.2.

### Claim 11 (depends on 8)

The low-dielectric film of claim 8, wherein
the low-dielectric film has a dielectric constant of 2.5 or more and 3 or less.

### Claim 12 (depends on 8)

The low-dielectric film of claim 8, wherein
the low-dielectric film has an elasticity coefficient of 8 Gpa to 15 Gpa.

### Claim 13 (depends on 8)

The low-dielectric film of claim 8, further comprising pores.

### Claim 14

A low-dielectric film manufacturing method comprising:
preparing a base; and
depositing a silicon precursor comprising *—Si—C—Si—* bonds on the base to form a low-dielectric film,
wherein a ratio of *—Si—C—Si—* bond unit to *—Si—O—* bond unit in the low-dielectric film is 0.1 to 0.8.

### Claim 15 (depends on 14)

The low-dielectric film manufacturing method of claim 14, wherein
the ratio of *—Si—C—Si—* bond unit to *—Si—O—* bond unit of the low-dielectric film is 0.1 to 0.2.

### Claim 16 (depends on 14)

The low-dielectric film manufacturing method of claim 14, wherein
the depositing the silicon precursor is performed by atomic layer deposition, metal-organic chemical vapor deposition, low pressure vapor deposition, plasma enhanced chemical vapor deposition, plasma enhanced atomic layer deposition, VHF (Very High Frequency) chemical vapor deposition, or initiated chemical vapor deposition (iCVD).

### Claim 17 (depends on 16)

The low-dielectric film manufacturing method of claim 16, wherein
the depositing the low-dielectric film is performed by the plasma-enhanced chemical vapor deposition method.

### Claim 18 (depends on 14)

The low-dielectric film manufacturing method of claim 14, further comprising:
patterning the low-dielectric film for metal deposition.

### Claim 19 (depends on 18)

The low-dielectric film manufacturing method of claim 18, wherein
a pitch formed after the patterning is less than 100 nm.

### Claim 20 (depends on 14)

The low-dielectric film manufacturing method of claim 14, wherein
the silicon precursor comprises at least one of the following chemical formula E-1 to chemical formula E-8: