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US 2026/0082839 A1Published application
Method for forming contact hole and method for manufacturing semiconductor device
AssigneeCanon Kabushiki Kaisha
InventorsAKIRA MATSUZAKI, MAYU ISHIKAWA, KOJI HARA
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Abstract
A method for forming a contact hole includes forming a light shielding film on a substrate, forming a first film having a flat upper surface by applying a precursor on the substrate in such a manner that an application amount of the precursor is smaller on the light shielding film than on another portion, and patterning the first film when forming the contact hole.
Claims20
A method for forming a contact hole, comprising:
- forming a light shielding film on a substrate;
- forming a first film having a flat upper surface by applying a precursor on the substrate in such a manner that an application amount of the precursor is smaller on the light shielding film than on another portion;
- and
- patterning the first film when forming the contact hole.
1 more element
A method for forming a contact hole, comprising:
- forming a first film having a flat upper surface by applying a first precursor on an insulating layer disposed on a gate electrode of a transistor in such a manner that an application amount of the first precursor is smaller on the gate electrode than on another portion;
- patterning the first film disposed on the gate electrode;
- patterning the insulating layer disposed on the gate electrode;
- forming a second film having a flat upper surface by applying a second precursor on a substrate with the gate electrode and the insulating layer disposed thereon in such a manner that an application amount of the second precursor is larger on the gate electrode than on another portion;
- and
- patterning the second film when forming the contact hole in the insulating layer.
3 more elements
A method for manufacturing a semiconductor device, comprising:
- forming a light shielding film on a substrate;
- forming a first film having a flat upper surface by applying a precursor on the substrate in such a manner that an application amount of the precursor is smaller on the light shielding film than on another portion;
- and
- forming a contact hole by patterning the first film.
1 more element
Dependencies are inferred from the claim text.