High Critical Temperature Device with Metal Nitride Layer
AssigneeApplied Materials, Inc.
InventorsZihao YANG, Mingwei ZHU, Shriram MANGIPUDI, Mohammad Kamruzzaman CHOWDHURY, Shane LAVAN, Zhebo CHEN, Yong CAO, Nag B. PATIBANDLA
Life of this patent
Estimating the term…
Abstract
A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate, exposing the seed layer to an oxygen-containing gas or plasma to form a modified seed layer, and after exposing the seed layer to the oxygen-containing gas or plasma depositing a metal nitride superconductive layer directly on the modified seed layer. The seed layer is a nitride of a first metal, and the superconductive layer is a nitride of a different second metal.
Claims17
A superconducting device, comprising:
- a dielectric or semiconductor substrate;
- an oxynitride seed layer disposed on the substrate, the oxynitride seed layer being an oxynitride of a first metal;
- a metal nitride superconductive layer disposed directly on the seed layer and patterned to form a wire, the metal nitride superconductive being a nitride of a different second metal, wherein the second metal is niobium, titanium, or an alloy of niobium and titanium;
- and
- a capping layer of amorphous silicon, an oxide, or a metal nitride which is a nitride of silicon, of the first metal or of a different third metal.
Dependencies are inferred from the claim text.