Optoelectronic device and preparation method thereof, and display device
AssigneesGuangdong Juhua Research Institute of Advanced Display, Shenzhen TCL High-Tech Development Co., Ltd.
InventorFuqiang QIANG
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Abstract
The present disclosure provides an optoelectronic device and a preparation method thereof, and a display device. The optoelectronic device includes an anode, a light-emitting layer, an electron functional layer, and a cathode staked in this order. A material of the electron functional layer includes an N-type metal oxide particle and a dopant, and an electronegativity of the dopant ranges from 2.50 to 5.00. The optoelectronic devices described in the present disclosure have a long lifetime.
Claims20
An optoelectronic device, comprising:
- an anode, a light-emitting layer, an electron functional layer, and a cathode staked in this order;
- wherein a material of the electron functional layer comprises an N-type metal oxide particle and a dopant, and an electronegativity of the dopant ranges from 2.50 to 5.00.
A method of preparing an optoelectronic device, comprising:
- providing an optoelectronic device preform comprising a first electrode;
- providing an electronic functional material dispersion comprising an N-type metal oxide particle, a dopant and a first organic solvent, and disposing the electronic functional material dispersion on the optoelectronic device preform to obtain an electron functional layer, and an electronegativity of the dopant ranges from 2.50 to 5.00;
- and
- forming a second electrode on the electron functional layer to obtain the optoelectronic device.
A display device, comprising an optoelectronic device, the optoelectronic device comprising:
- an anode, a light-emitting layer, an electron functional layer, and a cathode staked in this order;
- wherein a material of the electron functional layer comprises an N-type metal oxide particle and a dopant, and an electronegativity of the dopant ranges from 2.50 to 5.00.
Dependencies are inferred from the claim text.