Semiconductor device, inverter circuit, driving device, vehicle, and elevator

A semiconductor device comprising:

• a silicon carbide layer;
• a gate electrode;
• a silicon oxide layer provided between the silicon carbide layer and the gate electrode and containing, boron (B), carbon (C), and one element selected from a group consisting of hydrogen (H), deuterium (D), and fluorine (F);
• and
• a region provided between the silicon carbide layer and the silicon oxide layer and having a boron concentration equal to or more than 1×1020 cm−3,
• wherein a boron concentration distribution in the silicon carbide layer, the silicon oxide layer, and the region has a first peak in the region,
• a first concentration of boron at a first position 5 nm away from the first peak toward the silicon oxide layer is equal to or more than 1×1018 cm−3,
• a second concentration of carbon at the first position is equal to or more than 1×1018 cm−3,
• a third concentration of the element at the first position is equal to or more than 1×1018 cm−3,
• the second concentration is 80% or more and 120% or less of the first concentration, and
• the third concentration is 80% or more and 120% or less of the first concentration.