US 2026/0082601 A1Published application

Stacked pin diode and method of making same

AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.

InventorsYu-Hung YEH, Jui-Chien HUANG, Wun-Jie LIN

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Abstract

A diode structure includes a first stack of semiconductor layers, wherein the first stack of semiconductor layers includes a plurality of first semiconductor layers arranged in an alternating arrangement with a plurality of second semiconductor layers. The diode structure further includes a second stack of semiconductor layers, wherein the second stack of semiconductor layers includes a plurality of third semiconductor layers arranged in an alternating arrangement with a plurality of fourth semiconductor layers. The diode structure further includes a fifth semiconductor layer between the first stack of semiconductor layers and the second stack of semiconductor layers, wherein a composition of the fifth semiconductor layer is different from each of the plurality of first, second, third and fourth semiconductor layers. The diode structure further includes an n-type doped region in the first stack of semiconductor layers; and a p-type doped region in the second stack of semiconductor layers.

Claims20

Dependent claims

A diode structure comprising:

a first stack of semiconductor layers, wherein the first stack of semiconductor layers comprises a plurality of first semiconductor layers arranged in an alternating arrangement with a plurality of second semiconductor layers, and each of the plurality of first semiconductor layers has a different composition from each of the plurality of second semiconductor layers;
a second stack of semiconductor layers, wherein the second stack of semiconductor layers comprises a plurality of third semiconductor layers arranged in an alternating arrangement with a plurality of fourth semiconductor layers, and each of the plurality of third semiconductor layers has a different composition from each of the plurality of fourth semiconductor layers;
a fifth semiconductor layer between the first stack of semiconductor layers and the second stack of semiconductor layers, wherein a composition of the fifth semiconductor layer is different from each of the plurality of first semiconductor layers, each of the plurality of second semiconductor layers, each of the plurality of third semiconductor layers and each of the plurality of fourth semiconductor layers;
an n-type doped region in the first stack of semiconductor layers;
and
a p-type doped region in the second stack of semiconductor layers.

3 more elements

Dependencies are inferred from the claim text.