Light-emitting element and method of manufacturing the same

2:

• The light-emitting element according to claim 1, further comprising at least two layers of light absorption material layers that are formed in the laminated structure body including a second electrode to be parallel to a virtual plane that is occupied by the active layer.

3:

• The light-emitting element according to claim 1, wherein when the first light reflection layer is cut out on a virtual plane including a lamination direction of the laminated structure body, a figure that is drawn by an interface, which faces the laminated structure body, of a part of the concave mirror portion of the first light reflection layer is a part of a circle or a part of a parabola.

6:

• The light-emitting element according to claim 4,
• wherein a radius r′DBR of an effective region in the concave mirror portion of the first light reflection layer satisfies a relationship of ω0≤r′DBR≤1·ω0.

7:

• The light-emitting element according to claim 4, wherein
• a relationship of DCI coo is satisfied.

8:

• The light-emitting element according to claim 4, wherein
• a relationship of RDBR≤1×10−3 m is satisfied.

10:

• The light-emitting element according to claim 1, further comprising:
• a compound semiconductor substrate that is provided between the first surface of the first compound semiconductor layer and the first light reflection layer,
• wherein the compound semiconductor substrate includes a GaN substrate.

11:

• The light-emitting element according to claim 1, wherein
• the concave mirror portion of the first light reflection layer includes a base portion that is a protruding portion of the compound semiconductor substrate, and a multi-layer light reflection film that is formed on at least a partial surface of the base portion.

12:

• The light-emitting element according to claim 1, wherein
• the concave mirror portion of the first light reflection layer includes a base portion that is formed on a compound semiconductor substrate, and a multi-layer light reflection film that is formed on at least a partial surface of the base portion.

13:

• The light-emitting element according to claim 1, wherein
• a value of heat conductivity of the laminated structure body is higher than a value of heat conductivity of the first light reflection layer.

14:

• The light-emitting element according to claim 1, wherein
• when a radius of curvature of the concave mirror portion of the light-emitting element is set as RDBR, a relationship of RDBR≤1×10−3 m is satisfied.

15:

• The light-emitting element according to claim 1, wherein
• the first compound semiconductor layer includes an n-type GaN layer and the second compound semiconductor layer includes a p-type GaN layer.

16:

• The light-emitting element according to claim 1, wherein
• the active layer includes a five-layer multiple quantum well structure.

17:

• The light-emitting element according to claim 1, wherein
• the first light reflection layer includes a lamination structure of a tantalum pentoxide layer and a silicon dioxide layer.