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US 2026/0077458 A1Published application
Methods and systems for deposition to gaps using an inhibitor
AssigneeASM IP Holding B.V.
InventorsSuvi P. Haukka, Eva E. Tois, Varun Sharma
Life of this patent
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Abstract
The present disclosure is directed to methods and systems for depositing a material within a gap of a substrate in a cyclic deposition process. The methods and systems utilize an inhibitor to preferentially blocks chemisorption of a subsequently introduced first precursor at a portion of available chemisorption sites in the gap to promote deeper penetration of the first precursor into the gap and/or more uniform chemisorption of the first precursor in the gap used in forming a desired material.
Claims20
A system for depositing a material within a gap of a substrate, comprising:
- a reaction chamber configured to accommodate a substrate, the substrate comprising a gap, one or more interior surfaces of the gap comprising a plurality of chemisorption sites;
- a first source containing an inhibitor and coupled to the reaction chamber via a first valve;
- a second source containing a first precursor and coupled to the reaction chamber via a second valve;
- a third source containing a second precursor and coupled to the reaction chamber via a third valve;
- and
- a controller configured and programmed to operate the first, second, and third valves to perform at least one deposition cycle in the reaction chamber, the at least one deposition cycle comprising:
- (a) operating the first valve to introduce the inhibitor into the reaction chamber to contact the gap, wherein the inhibitor occupies at least a portion of the chemisorption sites in the gap;
- (b) operating the second valve to introduce the first precursor into the reaction chamber to chemisorb the first precursor within the gap at chemisorption sites not occupied by the inhibitor;
- and
- (c) operating the third valve to introduce the second precursor into the reaction chamber to form the material within the gap;
- wherein the inhibitor comprises a member selected from the group consisting of a cyclopentadienyl compound, a beta-diketonate compound, a boron-containing compound, an alkylhalide compound, and combinations thereof.
8 more elements
A system for depositing a material within a gap of a substrate, comprising:
- a reaction chamber configured to accommodate a substrate, the substrate comprising a gap, one or more interior surfaces of the gap comprising a plurality of chemisorption sites;
- a first source containing an inhibitor and coupled to the reaction chamber via a first valve;
- a second source containing a first precursor and coupled to the reaction chamber via a second valve;
- a third source containing a second precursor and coupled to the reaction chamber via a third valve;
- a fourth source containing an oxygen-containing gas and coupled to the reaction chamber via a fourth valve;
- and
- a controller configured and programmed to:
- (a) operate the first valve to introduce the inhibitor into the reaction chamber to contact the gap, wherein the inhibitor occupies at least a portion of the chemisorption sites in the gap;
- (b) operate the second valve to introduce the first precursor into the reaction chamber to chemisorb the first precursor within the gap at chemisorption sites not occupied by the inhibitor;
- (c) operate the fourth valve to introduce the oxygen-containing gas into the reaction chamber to remove the inhibitor from the gap;
- and
- (d) operate the third valve to introduce the second precursor in the reaction chamber to form the material within the gap.
9 more elements
A system for depositing a material within a gap of a substrate comprising:
- a reaction chamber for accommodating the substrate, the substrate comprising a gap, one or more interior surfaces of the gap comprising a plurality of chemisorption sites;
- a first source containing an inhibitor in gas communication via a first valve with the reaction chamber;
- a second source containing a first precursor in gas communication via a second valve with the reaction chamber;
- a third source containing a second precursor in gas communication via a third valve with the reaction chamber;
- and
- a controller operably connected to the first, second, and third valves configured and programmed to control in at least one deposition cycle in the reaction chamber, the at least one deposition cycle comprising:
- (a) contacting the gap with the inhibitor, wherein the inhibitor occupies a portion of the chemisorption sites in the gap;
- (b) following the contacting the gap with the inhibitor, contacting the gap with the first precursor to chemisorb the first precursor within the gap at chemisorption sites not occupied by the inhibitor;
- and
- (c) following the contacting the gap with the first precursor, contacting the gap with the second precursor to form the material within the gap,
- wherein the inhibitor comprises a member selected from the group consisting of a cyclopentadienyl compound, a beta-diketonate compound, a boron-containing compound, an alkylhalide compound, and combinations thereof.
8 more elements
Dependencies are inferred from the claim text.