Semiconductor device interconnect structure and method therefor
AssigneeNXP USA, Inc.
InventorsMiao Wang, Trent Uehling, Yu Cheng Lin
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Abstract
A method of manufacturing a semiconductor device interconnect structure is provided. The method includes forming a copper pillar on a semiconductor die by way of a plating process. A proximal portion of the copper pillar has a first width dimension, and a distal portion of the copper pillar has a second width dimension. The second width dimension of the distal portion of the copper pillar is configured to be smaller than the first width dimension of the proximal portion of the copper pillar. Sidewalls of the distal portion of the copper pillar are selectively roughened. The roughened sidewalls of the distal portion of the copper pillar are configured to promote solder wetting.
Claims20
A method comprising:
- forming a first copper pillar on a semiconductor die by way of a plating process, a proximal portion of the first copper pillar having a first width dimension and a distal portion of the first copper pillar having a second width dimension, the second width dimension smaller than the first width dimension;
- and
- selectively roughening sidewalls of the distal portion of the first copper pillar, the roughened sidewalls of the distal portion of the first copper pillar configured to promote solder wetting.
A method comprising:
- forming a first copper pillar and a second copper pillar on a semiconductor die by way of a plating process, each copper pillar includes a proximal portion having a first width dimension and a distal portion having a second width dimension, the second width dimension smaller than the first width dimension;
- and
- selectively roughening sidewalls of the distal portion of each copper pillar, the roughened sidewalls of the distal portion of the copper pillars configured to promote solder wetting.
A semiconductor device comprising:
- a semiconductor die;
- a first copper pillar formed on the semiconductor die, a proximal portion of the first copper pillar having a first width dimension and a distal portion of the first copper pillar having a second width dimension, the second width dimension smaller than the first width dimension;
- and
- a roughened surface formed on sidewalls of the distal portion of the first copper pillar, the roughened surface formed of the sidewalls of the distal portion of the first copper pillar configured to promote solder wetting.
Dependencies are inferred from the claim text.