# US 2026/0076236 A1 · Device including substrate with embedded component > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2026/0076236 A1 - Document ID: US20260076236A1 - Status: Published application - Kind: A1 - Application number: 18/882,345 - Filed: 2024-09-11 - Published: 2026-03-12 - Earliest claimed: 2024-09-11 - Assignees: QUALCOMM Incorporated - Applicants: QUALCOMM Incorporated - Inventors: Heun Gun SHIN; Kyudong KANG; Tsu-Wei LIN - Web page: https://patentgrep.com/patent/US20260076236A1 ## CPC - H10W 70/685: comprising multiple insulating layers - H10D 1/20: Inductors - H10W 40/22: characterised by their shape, e.g. having conical or cylindrical projections - H10W 70/05: of insulating or insulated package substrates, or of interposers, or of redistribution layers (manufacture or treatment of leadframes H10W70/04) - H10W 70/65: Shapes or dispositions of interconnections - H10W 70/69: Insulating materials thereof - H10W 90/00: Package configurations - H10W 40/228: {the projecting parts being wire-shaped or pin-shaped} - H10W 70/614: {the multiple chips being integrally enclosed} - H10W 72/072: {of bump connectors} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A device includes a substrate that includes a multilayer dielectric-metal structure including sidewall(s) that define an embedding region within the multilayer dielectric-metal structure. The multilayer dielectric-metal structure includes dielectric layers and metal layers patterned to define metal lines. The multilayer dielectric-metal structure also includes component(s) disposed within the embedding region. The substrate includes PID layers coupled to surfaces of the multilayer dielectric-metal structure and to surfaces of the component(s). The substrate also includes a metal structure including a portion in contact with at least one of the sidewall(s) of the multilayer dielectric-metal structure and at least one sidewall of one of the component(s), where the portion of the metal structure electrically couples a component and the metal lines of the multilayer dielectric-metal structure. ## Claims ### Claim 1 A device comprising: a substrate comprising: a multilayer dielectric-metal structure including one or more sidewalls that define an embedding region within the multilayer dielectric-metal structure, the multilayer dielectric-metal structure including: first metal layers patterned to define first metal lines; and first dielectric layers; a first component disposed within the embedding region; a first photoimageable dielectric (PID) layer coupled to a first surface of the multilayer dielectric-metal structure and to a first surface of the first component, wherein the first surface of the multilayer dielectric-metal structure is adjacent to the one or more sidewalls of the multilayer dielectric-metal structure; a second PID layer coupled to a second surface of the multilayer dielectric-metal structure and to a second surface of the first component, wherein the second surface of the multilayer dielectric-metal structure is adjacent to the one or more sidewalls of the multilayer dielectric-metal structure and is opposite the first surface of the multilayer dielectric-metal structure; and a first metal structure including a portion in contact with at least one of the one or more sidewalls of the multilayer dielectric-metal structure and at least one sidewall of the first component, wherein the portion of the first metal structure is electrically coupled to the first component and the first metal lines. ### Claim 2 (depends on 1) The device of claim 1, wherein the first component comprises an inductor device including one or more coils, wherein the one or more coils define a coil axis oriented along a first direction that is substantially parallel with respect to a normal of at least one of the one or more sidewalls of the multilayer dielectric-metal structure. ### Claim 3 (depends on 1) The device of claim 1, wherein the first component comprises a heat sink, and wherein the substrate further comprises one or more second metal structures that define thermal conduction paths between the heat sink and one or more surfaces of the substrate. ### Claim 4 (depends on 1) The device of claim 1, wherein the substrate further comprises: one or more additional components disposed within the embedding region, the one or more additional components including a second component; and a second metal structure including a portion in contact with at least one of the one or more sidewalls of the multilayer dielectric-metal structure and at least one sidewall of the second component, wherein the portion of the second metal structure electrically couples the second component and the first metal lines. ### Claim 5 (depends on 4) The device of claim 4, wherein the substrate further comprises a third metal structure including a portion in contact with at least one sidewall of the first component and at least one sidewall of the second component, the portion of the third metal structure electrically couple the first component and the second component. ### Claim 6 (depends on 4) The device of claim 4, wherein the first component includes a first inductor device with a first coil axis, and the second component includes a second inductor device with a second coil axis that is oriented substantially parallel to the first coil axis. ### Claim 7 (depends on 1) The device of claim 1, wherein the substrate further comprises one or more second metal layers on the first PID layer and electrically coupled, by one or more conductive vias through the first PID layer, to the first metal layers. ### Claim 8 (depends on 7) The device of claim 7, wherein the substrate further comprises one or more third metal layers on the second PID layer and electrically coupled, by one or more conductive vias through the second PID layer, to the first metal layers. ### Claim 9 (depends on 8) The device of claim 8, further comprising one or more traces that are directly above or directly below the first component in a closest metal layer to the first component. ### Claim 10 A device comprising: an integrated device; and a substrate electrically coupled to the integrated device, the substrate comprising: a multilayer dielectric-metal structure including one or more sidewalls that define an embedding region within the multilayer dielectric-metal structure, the multilayer dielectric-metal structure including: first metal layers patterned to define first metal lines; and first dielectric layers; a first component disposed within the embedding region; a first photoimageable dielectric (PID) layer coupled to a first surface of the multilayer dielectric-metal structure and to a first surface of the first component, wherein the first surface of the multilayer dielectric-metal structure is adjacent to the one or more sidewalls of the multilayer dielectric-metal structure; a second PID layer coupled to a second surface of the multilayer dielectric-metal structure and to a second surface of the first component, wherein the second surface of the multilayer dielectric-metal structure is adjacent to the one or more sidewalls of the multilayer dielectric-metal structure and is opposite the first surface of the multilayer dielectric-metal structure; and a first metal structure including a portion in contact with at least one of the one or more sidewalls of the multilayer dielectric-metal structure and at least one sidewall of the first component, wherein the portion of the first metal structure is electrically coupled to the first component and the first metal lines. ### Claim 11 (depends on 10) The device of claim 10, wherein the first component is electrically coupled to the integrated device by way of the first metal structure. ### Claim 12 (depends on 10) The device of claim 10, wherein the first component comprises an inductor device including one or more coils, wherein the one or more coils define a coil axis oriented along a first direction that is substantially parallel with respect to a normal of at least one of the one or more sidewalls of the multilayer dielectric-metal structure. ### Claim 13 (depends on 10) The device of claim 10, wherein the first component comprises a heat sink, and wherein the substrate further comprises one or more second metal structures that define thermal conduction paths between the heat sink and the integrated device. ### Claim 14 (depends on 10) The device of claim 10, wherein the substrate further comprises: one or more additional components disposed within the embedding region, the one or more additional components including a second component; and a second metal structure including a portion in contact with at least one of the one or more sidewalls of the multilayer dielectric-metal structure and at least one sidewall of the second component, wherein the portion of the second metal structure electrically couples the second component and the first metal lines. ### Claim 15 (depends on 14) The device of claim 14, wherein the substrate further comprises a third metal structure including a portion in contact with at least one sidewall of the first component and at least one sidewall of the second component, the portion of the third metal structure is electrically coupled to the first component and the second component. ### Claim 16 (depends on 14) The device of claim 14, wherein the first component includes a first inductor device with a first coil axis, and the second component includes a second inductor device with a second coil axis that is oriented substantially parallel to the first coil axis. ### Claim 17 A method of fabrication comprising: positioning a first component within an opening of an embedding region defined by one or more sidewalls of a multilayer dielectric-metal structure, wherein the multilayer dielectric-metal structure includes first metal layers patterned to define first metal lines and first dielectric layers; forming a photoimageable dielectric (PID) layer on the one or more sidewalls of the multilayer dielectric-metal structure and on one or more sidewalls of the first component; forming a first metal structure including a portion in contact with at least one of the one or more sidewalls of the multilayer dielectric-metal structure and at least one of the one or more sidewalls of the first component, wherein the portion of the first metal structure is electrically coupled to the first component and the first metal lines; and forming one or more additional PID layer on one or more surfaces of the multilayer dielectric-metal structure that are adjacent to the one or more sidewalls of the multilayer dielectric-metal structure. ### Claim 18 (depends on 17) The method of claim 17, further comprising electrically connecting an integrated device to the first component by way of the first metal structure. ### Claim 19 (depends on 17) The method of claim 17, wherein the first component comprises an inductor device including one or more coils, wherein the one or more coils define a coil axis, and wherein said positioning the first component within the opening includes orienting the coil axis along a first direction that is substantially parallel with respect to a normal of at least one of the one or more sidewalls of the multilayer dielectric-metal structure. ### Claim 20 (depends on 17) The method of claim 17, wherein the first component comprises a heat sink, and further comprising: forming one or more second metal structures coupled to the first component; and coupling an integrated device to the one or more second metal structures to define thermal conduction paths between the heat sink and the integrated device.