# US 2026/0076192 A1 · Thermal interface material for semiconductors

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- Number: US 2026/0076192 A1
- Document ID: US20260076192A1
- Status: Published application
- Kind: A1
- Application number: 18/882,899
- Filed: 2024-09-12
- Published: 2026-03-12
- Earliest claimed: 2024-09-12
- Applicants: Taiwan Semiconductor Manufacturing Company, Ltd.
- Inventors: Yu-Sheng Lin; Jia-Shen Lan; Jui Shen Chang; Jyun-Lin Wu; Yao-Chun Chuang
- Web page: https://patentgrep.com/patent/US20260076192A1

## CPC

- H10W 40/255: {having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates}
- H10W 40/037: {Assembling together parts thereof}
- H10W 40/228: {the projecting parts being wire-shaped or pin-shaped}
- H10W 40/251: {Organics}
- H10W 40/253: {Semiconductors}
- H10W 74/15: on active surfaces of flip-chip devices, e.g. underfills
- H10W 76/12: characterised by their shape
- H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A thermal interface film is used between a semiconductor die and a heat sink. The thermal interface film includes at least two layers, a first layer with vertically oriented graphite and a second layer with horizontally oriented graphite. The thermal interface film directs heat away from the semiconductor die both upwards and outwards, spreading the heat over a larger surface area more quickly.

## Claims

### Claim 1

A method for applying a heat sink to a semiconductor package, comprising:
applying a thermal interface film over the semiconductor package; and
applying the heat sink over the thermal interface film;
wherein the thermal interface film includes at least a first layer and a second layer, the first layer comprising vertically oriented graphite and the second layer comprising horizontally oriented graphite.

### Claim 2 (depends on 1)

The method of claim 1, wherein the thermal interface film further comprises a third layer that comprises vertically oriented graphite, the second layer being located between the first layer and the third layer.

### Claim 3 (depends on 2)

The method of claim 2, wherein a thickness of the first layer is equal to or greater than a thickness of the third layer.

### Claim 4 (depends on 2)

The method of claim 2, wherein a thickness of the first layer is less than a thickness of the third layer.

### Claim 5 (depends on 1)

The method of claim 1, wherein the semiconductor package includes a semiconductor die, and either:
the horizontally oriented graphite in the second layer is located within a length that is greater than a length of the semiconductor die and less than a length of the semiconductor package or
the horizontally oriented graphite in the second layer is located within a peripheral region of the second layer that overlaps an edge region of the semiconductor die.

### Claim 6 (depends on 1)

The method of claim 1, wherein the thermal interface film is applied so that the second layer is closer to the semiconductor package than the first layer.

### Claim 7 (depends on 1)

The method of claim 1, wherein the thermal interface film is applied so that the first layer is closer to the semiconductor package than the second layer.

### Claim 8 (depends on 1)

The method of claim 1, wherein the thermal interface film is applied to a semiconductor die of the semiconductor package, and further comprising:
applying a lid over the thermal interface film;
applying a thermal interface material to the lid; and
applying the heat sink over the thermal interface material.

### Claim 9 (depends on 1)

The method of claim 1, wherein the heat sink directly contacts the thermal interface film.

### Claim 10

A semiconductor package, comprising:
a semiconductor die; and
a thermal interface film over the semiconductor die;
wherein the thermal interface film includes at least a first layer and a second layer, the first layer comprising vertically oriented graphite and the second layer comprising horizontally oriented graphite.

### Claim 11 (depends on 10)

The package of claim 10, wherein the thermal interface film further comprises a third layer that comprises vertically oriented graphite, the second layer being located between the first layer and the third layer.

### Claim 12 (depends on 11)

The package of claim 11, wherein a thickness of the first layer is equal to or greater than a thickness of the third layer.

### Claim 13 (depends on 11)

The package of claim 11, wherein a thickness of the first layer is less than a thickness of the third layer.

### Claim 14 (depends on 10)

The package of claim 10, wherein the horizontally oriented graphite in the second layer is located within a length that is greater than a length of the semiconductor die and less than a length of the semiconductor package; or
wherein the horizontally oriented graphite in the second layer is located within a peripheral region of the second layer that overlaps an edge region of the semiconductor die.

### Claim 15 (depends on 10)

The package of claim 10, further comprising a lid, wherein the thermal interface film is between the semiconductor die and the lid, and a thermal interface material is present between the heat sink and the lid.

### Claim 16 (depends on 10)

The package of claim 10, wherein the heat sink directly contacts the thermal interface film.

### Claim 17

A processor module, comprising:
a semiconductor die;
a thermal interface film over the semiconductor die; and
a heat sink over the thermal interface film;
wherein the thermal interface film is a single layer comprising graphite oriented in a first volume and graphite oriented in a second volume which is different from the first volume.

### Claim 18 (depends on 17)

The processor module of claim 17, wherein an angle formed between the first volume and the second volume is at least 45°.

### Claim 19 (depends on 17)

The processor module of claim 17, wherein the graphite in the first volume is vertically oriented and the graphite in the second volume is horizontally oriented.

### Claim 20 (depends on 17)

The processor module of claim 17, wherein the single layer of the thermal interface film further comprises a polymeric resin.