# US 2026/0076191 A1 · Laminated substrate > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2026/0076191 A1 - Document ID: US20260076191A1 - Status: Published application - Kind: A1 - Application number: 19/387,821 - Filed: 2025-11-13 - Published: 2026-03-12 - Earliest claimed: 2023-06-01 - Assignees: NGK Insulators, Ltd. - Applicants: Ngk Insulators, Ltd. - Inventors: Morimichi WATANABE; Ayumi SUZUKI; Takahiro TOMITA - Web page: https://patentgrep.com/patent/US20260076191A1 ## CPC - H10W 40/254: {Diamond} - C01B 32/25: Diamond - C30B 29/04: Diamond - H10W 40/10: Arrangements for heating - H10W 40/255: {having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C} - C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR ## Abstract There is provided a laminated substrate including a three-layer structure composed of: a device substrate, which is composed of at least one single crystal material selected from the group consisting of Si, SiC, GaN, AlN, BN, Ga2O3, Cr2O3, LiTaO3, and LiNbO3; a metal layer on the device substrate; and a diamond layer on the metal layer. ## Claims ### Claim 1 A laminated substrate comprising a three-layer structure composed of: a device substrate, which is composed of at least one single crystal material selected from the group consisting of Si, SiC, GaN, AlN, BN, Ga2O3, Cr2O3, LiTaO3, and LiNbO3; a metal layer on the device substrate; and a diamond layer on the metal layer. ### Claim 2 (depends on 1) The laminated substrate according to claim 1, wherein the device substrate is composed of at least one single crystal material selected from the group consisting of Si and SiC. ### Claim 3 (depends on 1) The laminated substrate according to claim 1, wherein the device substrate is composed of at least one single crystal material selected from the group consisting of GaN, AlN, and BN. ### Claim 4 (depends on 1) The laminated substrate according to claim 1, wherein the device substrate is composed of at least one single crystal material selected from the group consisting of Ga2O3, Cr2O3, LiTaO3, and LiNbO3. ### Claim 5 (depends on 1) The laminated substrate according to claim 1, wherein the metal layer is composed of a metal or alloy comprising at least one selected from the group consisting of Ir, Rh, Pt, Ru, and Au. ### Claim 6 (depends on 1) The laminated substrate according to claim 1, wherein the metal layer is composed of a metal or alloy comprising at least one selected from the group consisting of Ni, Cu, Fe, and Co. ### Claim 7 (depends on 1) The laminated substrate according to claim 1, wherein the metal layer is composed of a metal or alloy comprising Be. ### Claim 8 (depends on 1) The laminated substrate according to claim 1, wherein the metal layer is composed of a metal or alloy comprising Ir. ### Claim 9 (depends on 1) The laminated substrate according to claim 1, wherein the diamond layer is composed of a diamond single crystal. ### Claim 10 (depends on 1) The laminated substrate according to claim 1, wherein the diamond layer is composed of a biaxially oriented layer of diamond. ### Claim 11 (depends on 1) The laminated substrate according to claim 1, wherein the diamond layer is composed of a uniaxially oriented layer of diamond. ### Claim 12 (depends on 1) The laminated substrate according to claim 1, wherein the device substrate has a thickness of 1 μm to 30 μm. ### Claim 13 (depends on 1) The laminated substrate according to claim 1, wherein the metal layer has a thickness of 50 nm to 100 μm. ### Claim 14 (depends on 1) The laminated substrate according to claim 1, wherein the diamond layer has a thickness of 100 μm to 2.0 mm. ### Claim 15 (depends on 1) The laminated substrate according to claim 1, wherein a thickness Ts of the device substrate, a thickness Tm of the metal layer, and a thickness Td of the diamond layer satisfy relationships Td≥Ts×10 and Td≥Tm×10. ### Claim 16 (depends on 1) The laminated substrate according to claim 1, wherein a thickness Ts of the device substrate, a thickness Tm of the metal layer, and a thickness Td of the diamond layer satisfy relationships Ts≥Tm×10 and Ts≥Td×10. ### Claim 17 (depends on 1) The laminated substrate according to claim 1, wherein a thickness Ts of the device substrate, a thickness Tm of the metal layer, and a thickness Td of the diamond layer satisfy relationships Tm≥Ts×10 and Tm≥Td×10. ### Claim 18 (depends on 1) The laminated substrate according to claim 1, wherein a thickness Ts of the device substrate, a thickness Tm of the metal layer, and a thickness Td of the diamond layer satisfy relationships Ts≥Tm×10 and Td≥Tm×10. ### Claim 19 (depends on 1) The laminated substrate according to claim 1, wherein the metal layer is a film composed of a metal or alloy comprising Be deposited by sputtering.